Bright and Purcell-enhanced single photon emission from a silicon G center
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866909598501306368 |
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| author | Kim, Kyu-Young Lee, Chang-Min Boreiri, Amirehsan Purkayastha, Purbita Islam, Fariba Harper, Samuel Kim, Je-Hyung Waks, Edo |
| author_facet | Kim, Kyu-Young Lee, Chang-Min Boreiri, Amirehsan Purkayastha, Purbita Islam, Fariba Harper, Samuel Kim, Je-Hyung Waks, Edo |
| contents | Silicon G centers show significant promise as single photon sources in a scalable silicon platform. But these color centers have large non-radiative decay and a low Debye-Waller factor, limiting their usability in quantum applications. In this work, we demonstrate bright Purcell-enhanced emission from a silicon G center by coupling it to a nanophotonic cavity. The nanobeam cavity enhances the spontaneous emission rate of a single G center by a factor of 6, corresponding to a Purcell factor greater than 31 when accounting for decay into the phonon sideband. We obtain a spontaneous emission rate of 0.97 ns, which is the fastest single photon emission rate reported in silicon. With this radiative enhancement, we achieve an order of magnitude improvement in emitter brightness compared to previously reported values. These results pave the way for scalable quantum light sources on a silicon photonic chip. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_10603 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Bright and Purcell-enhanced single photon emission from a silicon G center Kim, Kyu-Young Lee, Chang-Min Boreiri, Amirehsan Purkayastha, Purbita Islam, Fariba Harper, Samuel Kim, Je-Hyung Waks, Edo Optics Quantum Physics Silicon G centers show significant promise as single photon sources in a scalable silicon platform. But these color centers have large non-radiative decay and a low Debye-Waller factor, limiting their usability in quantum applications. In this work, we demonstrate bright Purcell-enhanced emission from a silicon G center by coupling it to a nanophotonic cavity. The nanobeam cavity enhances the spontaneous emission rate of a single G center by a factor of 6, corresponding to a Purcell factor greater than 31 when accounting for decay into the phonon sideband. We obtain a spontaneous emission rate of 0.97 ns, which is the fastest single photon emission rate reported in silicon. With this radiative enhancement, we achieve an order of magnitude improvement in emitter brightness compared to previously reported values. These results pave the way for scalable quantum light sources on a silicon photonic chip. |
| title | Bright and Purcell-enhanced single photon emission from a silicon G center |
| topic | Optics Quantum Physics |
| url | https://arxiv.org/abs/2412.10603 |