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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2412.10640 |
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| _version_ | 1866916878597750784 |
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| author | Sharma, Amis Chen, Chun-Chia McCourt, Jordan Kim, Mingi Watanabe, Kenji Taniguchi, Takashi Rokhinson, Leonid Finkelstein, Gleb Borzenets, Ivan |
| author_facet | Sharma, Amis Chen, Chun-Chia McCourt, Jordan Kim, Mingi Watanabe, Kenji Taniguchi, Takashi Rokhinson, Leonid Finkelstein, Gleb Borzenets, Ivan |
| contents | We perform transport measurements on proximitized, ballistic, bilayer graphene Josephson junctions (BGJJs) in the intermediate-to-long junction regime ($L>ξ$). We measure the device's differential resistance as a function of bias current and gate voltage for a range of different temperatures. The extracted critical current $I_{C}$ follows an exponential trend with temperature: $ \exp(-k_{B} T/ δE)$. Here $δE = \hbar ν_F /2πL $: an expected trend for intermediate-to-long junctions. From $δE$, we determine the Fermi velocity of the bilayer graphene, which is found to increase with gate voltage. Simultaneously, we show the carrier density dependence of $δE$, which is attributed to the quadratic dispersion of bilayer graphene. This is in contrast to single layer graphene Josephson junctions, where $δE$ and the Fermi velocity are independent of the carrier density. The carrier density dependence in BGJJs allows for additional tuning parameters in graphene-based Josephson Junction devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_10640 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Fermi Velocity Dependent Critical Current in Ballistic Bilayer Graphene Josephson Junctions Sharma, Amis Chen, Chun-Chia McCourt, Jordan Kim, Mingi Watanabe, Kenji Taniguchi, Takashi Rokhinson, Leonid Finkelstein, Gleb Borzenets, Ivan Mesoscale and Nanoscale Physics Quantum Physics We perform transport measurements on proximitized, ballistic, bilayer graphene Josephson junctions (BGJJs) in the intermediate-to-long junction regime ($L>ξ$). We measure the device's differential resistance as a function of bias current and gate voltage for a range of different temperatures. The extracted critical current $I_{C}$ follows an exponential trend with temperature: $ \exp(-k_{B} T/ δE)$. Here $δE = \hbar ν_F /2πL $: an expected trend for intermediate-to-long junctions. From $δE$, we determine the Fermi velocity of the bilayer graphene, which is found to increase with gate voltage. Simultaneously, we show the carrier density dependence of $δE$, which is attributed to the quadratic dispersion of bilayer graphene. This is in contrast to single layer graphene Josephson junctions, where $δE$ and the Fermi velocity are independent of the carrier density. The carrier density dependence in BGJJs allows for additional tuning parameters in graphene-based Josephson Junction devices. |
| title | Fermi Velocity Dependent Critical Current in Ballistic Bilayer Graphene Josephson Junctions |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2412.10640 |