Towards Improved Polarization Uniformity in Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ Devices within Back End of Line Thermal Budget for Memory and Neuromorphic Applications
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| Format: | Preprint |
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2024
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| _version_ | 1866910747411349504 |
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| author | Srivari, Padma Paasio, Ella Li, Xinye Majumdar, Sayani |
| author_facet | Srivari, Padma Paasio, Ella Li, Xinye Majumdar, Sayani |
| contents | Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic weight elements. However, low thermal budget ferroelectric oxides suffer from crystalline inhomogeneity and defects that makes their large-scale circuit integration challenging. Here, we report on the thermally engineered way to induce wafer-scale homogeneity in Hf$_{0.5}$Zr$_{0.5}$O$_2$ capacitors that can lead to high device reliability making their integration possible in ultralow power memory and neuromorphic computing hardware. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2412_11288 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Towards Improved Polarization Uniformity in Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ Devices within Back End of Line Thermal Budget for Memory and Neuromorphic Applications Srivari, Padma Paasio, Ella Li, Xinye Majumdar, Sayani Applied Physics Materials Science Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic weight elements. However, low thermal budget ferroelectric oxides suffer from crystalline inhomogeneity and defects that makes their large-scale circuit integration challenging. Here, we report on the thermally engineered way to induce wafer-scale homogeneity in Hf$_{0.5}$Zr$_{0.5}$O$_2$ capacitors that can lead to high device reliability making their integration possible in ultralow power memory and neuromorphic computing hardware. |
| title | Towards Improved Polarization Uniformity in Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ Devices within Back End of Line Thermal Budget for Memory and Neuromorphic Applications |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2412.11288 |