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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2412.11470 |
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| _version_ | 1866916740272750592 |
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| author | Mahato, Jagadish Chandra Roy, Anupam Batabyal, Rajib Das, Debolina Gorain, Rahul Dey, Tuya Dev, B. N. |
| author_facet | Mahato, Jagadish Chandra Roy, Anupam Batabyal, Rajib Das, Debolina Gorain, Rahul Dey, Tuya Dev, B. N. |
| contents | $Ar^+$ ion has been used regularly for the cleaning of semiconductor, metal surfaces for epitaxial nanostructures growth. We have investigated the effect of low-energy $Ar^+$ ion sputtering and subsequent annealing on the $Si(111)-(7\times7)$ surfaces under ultrahigh vacuum (UHV) condition. Using $in-situ$ scanning tunnelling microscopy (STM) we have compared the morphological changes to the $Si(111)-(7\times7)$ surfaces before and after the sputtering process. Following $500~eV Ar^+$ ion sputtering, the atomically flat $Si(111)-(7\times7)$ surface becomes amorphous. The average root mean square (rms) surface roughness $(σ_{avg})$ of the sputtered surface and that following post-annealing at different temperatures $(500^\circ-700^\circ)C$ under UHV have been measured as a function of STM scan size. While, annealing at $\sim 500^\circ C$ shows no detectable changes in the surface morphology, recrystallization process starts at $\sim 600^\circ C$. For the sputtered samples annealed at temperatures $\geq 600^\circ C, \,log~σ_{avg}$ varies linearly at lower length scales and approaches a saturation value of $\sim 0.6 nm$ for the higher length scales confirming the self-affine fractal nature. The correlation length increases with annealing temperature indicating gradual improvement in crystallinity. For the present experimental conditions, $650^\circ C$ is the optimal annealing temperature for recrystallization. The results offer a method to engineer the crystallinity of sputtered surface during nanofabrication process. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_11470 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Effect of UHV annealing on morphology and roughness of sputtered $Si(111)-(7\times7)$ surfaces Mahato, Jagadish Chandra Roy, Anupam Batabyal, Rajib Das, Debolina Gorain, Rahul Dey, Tuya Dev, B. N. Materials Science $Ar^+$ ion has been used regularly for the cleaning of semiconductor, metal surfaces for epitaxial nanostructures growth. We have investigated the effect of low-energy $Ar^+$ ion sputtering and subsequent annealing on the $Si(111)-(7\times7)$ surfaces under ultrahigh vacuum (UHV) condition. Using $in-situ$ scanning tunnelling microscopy (STM) we have compared the morphological changes to the $Si(111)-(7\times7)$ surfaces before and after the sputtering process. Following $500~eV Ar^+$ ion sputtering, the atomically flat $Si(111)-(7\times7)$ surface becomes amorphous. The average root mean square (rms) surface roughness $(σ_{avg})$ of the sputtered surface and that following post-annealing at different temperatures $(500^\circ-700^\circ)C$ under UHV have been measured as a function of STM scan size. While, annealing at $\sim 500^\circ C$ shows no detectable changes in the surface morphology, recrystallization process starts at $\sim 600^\circ C$. For the sputtered samples annealed at temperatures $\geq 600^\circ C, \,log~σ_{avg}$ varies linearly at lower length scales and approaches a saturation value of $\sim 0.6 nm$ for the higher length scales confirming the self-affine fractal nature. The correlation length increases with annealing temperature indicating gradual improvement in crystallinity. For the present experimental conditions, $650^\circ C$ is the optimal annealing temperature for recrystallization. The results offer a method to engineer the crystallinity of sputtered surface during nanofabrication process. |
| title | Effect of UHV annealing on morphology and roughness of sputtered $Si(111)-(7\times7)$ surfaces |
| topic | Materials Science |
| url | https://arxiv.org/abs/2412.11470 |