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Hauptverfasser: Yu, Simin, Zhou, Ruixin, Yang, Guangcanlan, Zhang, Qiang, Zhu, Huizong, Yang, Yuanhao, Xu, Xin-Biao, Chen, Baile, Zou, Chang-Ling, Lu, Juanjuan
Format: Preprint
Veröffentlicht: 2024
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Online-Zugang:https://arxiv.org/abs/2412.11748
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author Yu, Simin
Zhou, Ruixin
Yang, Guangcanlan
Zhang, Qiang
Zhu, Huizong
Yang, Yuanhao
Xu, Xin-Biao
Chen, Baile
Zou, Chang-Ling
Lu, Juanjuan
author_facet Yu, Simin
Zhou, Ruixin
Yang, Guangcanlan
Zhang, Qiang
Zhu, Huizong
Yang, Yuanhao
Xu, Xin-Biao
Chen, Baile
Zou, Chang-Ling
Lu, Juanjuan
contents Thin film lithium niobate (TFLN) has emerged as a leading material platform for integrated nonlinear photonics, enabling transformative applications such as broadband Kerr soliton microcomb and high-speed electro-optic modulation. While stimulated Brillouin scattering has been numerically proposed in TFLN, achieving sufficient gain remains challenging due to the requirement for the simultaneous low optical and mechanical losses of the device. In this work, we systematically characterize the angle-dependence of Brillouin gain coefficients in x-cut membrane-suspended TFLN nanowaveguides, taking into account the anisotropy of the photoelastic coefficients in lithium niobate. We report a Brillouin gain coefficient of 129.5 m$^{-1}$W$^{-1}$ and further demonstrate the Brillouin frequency tuning through variations in either pump frequency or chip operating temperature. Based on the suspended TFLN nanowaveguide, by optimizing the confinement of both photonic and phononic modes, we have achieved a Brillouin amplifier with a record-high gain of 8.5 dB. This result not only validates the feasibility of strong guided Brillouin interaction using suspended TFLN nanowaveguides, but also paves the way for novel on-chip sensing and signal processing applications.
format Preprint
id arxiv_https___arxiv_org_abs_2412_11748
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle On-chip Brillouin Amplifier in Suspended Lithium Niobate Nanowaveguides
Yu, Simin
Zhou, Ruixin
Yang, Guangcanlan
Zhang, Qiang
Zhu, Huizong
Yang, Yuanhao
Xu, Xin-Biao
Chen, Baile
Zou, Chang-Ling
Lu, Juanjuan
Optics
Thin film lithium niobate (TFLN) has emerged as a leading material platform for integrated nonlinear photonics, enabling transformative applications such as broadband Kerr soliton microcomb and high-speed electro-optic modulation. While stimulated Brillouin scattering has been numerically proposed in TFLN, achieving sufficient gain remains challenging due to the requirement for the simultaneous low optical and mechanical losses of the device. In this work, we systematically characterize the angle-dependence of Brillouin gain coefficients in x-cut membrane-suspended TFLN nanowaveguides, taking into account the anisotropy of the photoelastic coefficients in lithium niobate. We report a Brillouin gain coefficient of 129.5 m$^{-1}$W$^{-1}$ and further demonstrate the Brillouin frequency tuning through variations in either pump frequency or chip operating temperature. Based on the suspended TFLN nanowaveguide, by optimizing the confinement of both photonic and phononic modes, we have achieved a Brillouin amplifier with a record-high gain of 8.5 dB. This result not only validates the feasibility of strong guided Brillouin interaction using suspended TFLN nanowaveguides, but also paves the way for novel on-chip sensing and signal processing applications.
title On-chip Brillouin Amplifier in Suspended Lithium Niobate Nanowaveguides
topic Optics
url https://arxiv.org/abs/2412.11748