Design and Performance Analysis of an Ultra-Low Power Integrate-and-Fire Neuron Circuit Using Nanoscale Side-contacted Field Effect Diode Technology
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arXiv
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| Autori principali: | , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866916527057403904 |
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| author | Motaman, Seyedmohamadjavad Sharif, Sarah Banad, Yaser |
| author_facet | Motaman, Seyedmohamadjavad Sharif, Sarah Banad, Yaser |
| contents | Enhancing power efficiency and performance in neuromorphic computing systems is critical for next-generation artificial intelligence applications. We propose the Nanoscale Side-contacted Field Effect Diode (S-FED), a novel solution that significantly lowers power usage and improves circuit speed, facilitating efficient neuron circuit design. Our innovative integrate-and-fire (IF) neuron model demonstrates exceptional performance metrics: 44 nW power consumption (85% lower than current designs), 0.964 fJ energy per spike (36% improvement over state-of-the-art), and 20 MHz spiking frequency. The architecture exhibits robust stability across process-voltage-temperature (PVT) variations, maintaining consistent performance with less than 7% spike amplitude variation for channel lengths from 7.5nm to 15nm, supply voltages from 0.8V to 1.2V, and temperatures from -40°C to 120°C. The model features tunable thresholds from 0.8V to 1.4V and reliable operation across input spike pulse widths from 0.5 ns to 2 ns. This significant advancement in neuromorphic hardware paves the way for more efficient brain-inspired computing systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_12443 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Design and Performance Analysis of an Ultra-Low Power Integrate-and-Fire Neuron Circuit Using Nanoscale Side-contacted Field Effect Diode Technology Motaman, Seyedmohamadjavad Sharif, Sarah Banad, Yaser Hardware Architecture Enhancing power efficiency and performance in neuromorphic computing systems is critical for next-generation artificial intelligence applications. We propose the Nanoscale Side-contacted Field Effect Diode (S-FED), a novel solution that significantly lowers power usage and improves circuit speed, facilitating efficient neuron circuit design. Our innovative integrate-and-fire (IF) neuron model demonstrates exceptional performance metrics: 44 nW power consumption (85% lower than current designs), 0.964 fJ energy per spike (36% improvement over state-of-the-art), and 20 MHz spiking frequency. The architecture exhibits robust stability across process-voltage-temperature (PVT) variations, maintaining consistent performance with less than 7% spike amplitude variation for channel lengths from 7.5nm to 15nm, supply voltages from 0.8V to 1.2V, and temperatures from -40°C to 120°C. The model features tunable thresholds from 0.8V to 1.4V and reliable operation across input spike pulse widths from 0.5 ns to 2 ns. This significant advancement in neuromorphic hardware paves the way for more efficient brain-inspired computing systems. |
| title | Design and Performance Analysis of an Ultra-Low Power Integrate-and-Fire Neuron Circuit Using Nanoscale Side-contacted Field Effect Diode Technology |
| topic | Hardware Architecture |
| url | https://arxiv.org/abs/2412.12443 |