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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2412.13016 |
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| _version_ | 1866916727754850304 |
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| author | Liu, Manwen Ji, Huimin Cheng, Wenzheng Zhang, Le Li, Zheng Tang, Bo Zhang, Peng Xiong, Wenjuan Vickey, Trevor Villani, E. Giulio Li, Zhihua Zhang, Dengfeng Luo, Jun |
| author_facet | Liu, Manwen Ji, Huimin Cheng, Wenzheng Zhang, Le Li, Zheng Tang, Bo Zhang, Peng Xiong, Wenjuan Vickey, Trevor Villani, E. Giulio Li, Zhihua Zhang, Dengfeng Luo, Jun |
| contents | The 3D silicon sensor has demonstrated excellent performances (signal collection, detection efficiency, power consumption, etc.) comparable or even better with respect to the traditional planar sensor of the ATLAS Detector at the Large Hadron Collider (LHC), especially after the high irradiation fluence, mainly due to the shorter drift length of the generated carriers. These characteristics have made it the most attractive technology for the detection and track reconstruction of charged particles for the High Energy Physics (HEP). In addition, its application is also being explored in astronomy, microdosimetry and medical imaging. This paper will present the design and fabrication of a novel 3D-Trench sensor which features an enclosed deep trench surrounding the central columnar cathode. This novel sensor has been fabricated on the 8-inch COMS pilot line at the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) where ultra-narrow etch width of 0.5 μm and the ultra-high depth-to-width ratio (aspect ratio) (>70) have been achieved. Its preliminary simulation and characterization results including electrostatic potential, electric field, Current-Voltage (IV), Capacitance-Voltage (CV), Charge Collection Efficiency (CCE) and Timing Performance before irradiation will be presented in this paper. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_13016 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Design, fabrication and initial test of a novel 3D-Trench sensor utilizing 8-inch CMOS compatible technology Liu, Manwen Ji, Huimin Cheng, Wenzheng Zhang, Le Li, Zheng Tang, Bo Zhang, Peng Xiong, Wenjuan Vickey, Trevor Villani, E. Giulio Li, Zhihua Zhang, Dengfeng Luo, Jun Instrumentation and Detectors High Energy Physics - Experiment The 3D silicon sensor has demonstrated excellent performances (signal collection, detection efficiency, power consumption, etc.) comparable or even better with respect to the traditional planar sensor of the ATLAS Detector at the Large Hadron Collider (LHC), especially after the high irradiation fluence, mainly due to the shorter drift length of the generated carriers. These characteristics have made it the most attractive technology for the detection and track reconstruction of charged particles for the High Energy Physics (HEP). In addition, its application is also being explored in astronomy, microdosimetry and medical imaging. This paper will present the design and fabrication of a novel 3D-Trench sensor which features an enclosed deep trench surrounding the central columnar cathode. This novel sensor has been fabricated on the 8-inch COMS pilot line at the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) where ultra-narrow etch width of 0.5 μm and the ultra-high depth-to-width ratio (aspect ratio) (>70) have been achieved. Its preliminary simulation and characterization results including electrostatic potential, electric field, Current-Voltage (IV), Capacitance-Voltage (CV), Charge Collection Efficiency (CCE) and Timing Performance before irradiation will be presented in this paper. |
| title | Design, fabrication and initial test of a novel 3D-Trench sensor utilizing 8-inch CMOS compatible technology |
| topic | Instrumentation and Detectors High Energy Physics - Experiment |
| url | https://arxiv.org/abs/2412.13016 |