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Proton irradiation on Hydrogenated Amorphous Silicon flexible devices

Fuente: arXiv
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Main Authors: Menichelli, M., Aziz, S., Bashiri, A., Bizzarri, M., Buti, C., Calcagnile, L., Calvo, D., Caprai, M., Caputo, D., Caricato, A. P., Catalano, R., Cazzanelli, M., Cirio, R., Cirrone, G. A. P., Cittadini, F., Croci, T., Cuttone, G., de Cesare, G., De Remigis, P., Dunand, S., Fabi, M., Frontini, L., Grimani, C., Guarrera, M., Hasnaoui, H., Ionica, M., Kanxheri, K., Large, M., Lenta, F., Liberali, V., Lovecchio, N., Martino, M., Maruccio, G., Maruccio, L., Mazza, G., Monteduro, A. G., Morozzi, A., Nascetti, A., Pallotta, S., Papi, A., Passeri, D., Pedio, M., Petasecca, M., Petringa, G., Peverini, F., Placidi, P., Polo, M., Quaranta, A., Quarta, G., Rizzato, S., Sabbatini, F., Servoli, L., Stabile, A., Talamonti, C., Thomet, J. E., Mora, M. S. Vasquez, Villani, M., Wheadon, R. J., Wyrsch, N., Zema, N., Tosti, L.
Format: Preprint
Published: 2024
Subjects:
Instrumentation and Detectors
Applied Physics
Online Access:
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author Menichelli, M.
Aziz, S.
Bashiri, A.
Bizzarri, M.
Buti, C.
Calcagnile, L.
Calvo, D.
Caprai, M.
Caputo, D.
Caricato, A. P.
Catalano, R.
Cazzanelli, M.
Cirio, R.
Cirrone, G. A. P.
Cittadini, F.
Croci, T.
Cuttone, G.
de Cesare, G.
De Remigis, P.
Dunand, S.
Fabi, M.
Frontini, L.
Grimani, C.
Guarrera, M.
Hasnaoui, H.
Ionica, M.
Kanxheri, K.
Large, M.
Lenta, F.
Liberali, V.
Lovecchio, N.
Martino, M.
Maruccio, G.
Maruccio, L.
Mazza, G.
Monteduro, A. G.
Morozzi, A.
Nascetti, A.
Pallotta, S.
Papi, A.
Passeri, D.
Pedio, M.
Petasecca, M.
Petringa, G.
Peverini, F.
Placidi, P.
Polo, M.
Quaranta, A.
Quarta, G.
Rizzato, S.
Sabbatini, F.
Servoli, L.
Stabile, A.
Talamonti, C.
Thomet, J. E.
Mora, M. S. Vasquez
Villani, M.
Wheadon, R. J.
Wyrsch, N.
Zema, N.
Tosti, L.
author_facet Menichelli, M.
Aziz, S.
Bashiri, A.
Bizzarri, M.
Buti, C.
Calcagnile, L.
Calvo, D.
Caprai, M.
Caputo, D.
Caricato, A. P.
Catalano, R.
Cazzanelli, M.
Cirio, R.
Cirrone, G. A. P.
Cittadini, F.
Croci, T.
Cuttone, G.
de Cesare, G.
De Remigis, P.
Dunand, S.
Fabi, M.
Frontini, L.
Grimani, C.
Guarrera, M.
Hasnaoui, H.
Ionica, M.
Kanxheri, K.
Large, M.
Lenta, F.
Liberali, V.
Lovecchio, N.
Martino, M.
Maruccio, G.
Maruccio, L.
Mazza, G.
Monteduro, A. G.
Morozzi, A.
Nascetti, A.
Pallotta, S.
Papi, A.
Passeri, D.
Pedio, M.
Petasecca, M.
Petringa, G.
Peverini, F.
Placidi, P.
Polo, M.
Quaranta, A.
Quarta, G.
Rizzato, S.
Sabbatini, F.
Servoli, L.
Stabile, A.
Talamonti, C.
Thomet, J. E.
Mora, M. S. Vasquez
Villani, M.
Wheadon, R. J.
Wyrsch, N.
Zema, N.
Tosti, L.
contents Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 um thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 um thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100°C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.
format Preprint
id arxiv_https___arxiv_org_abs_2412_13124
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Proton irradiation on Hydrogenated Amorphous Silicon flexible devices
Menichelli, M.
Aziz, S.
Bashiri, A.
Bizzarri, M.
Buti, C.
Calcagnile, L.
Calvo, D.
Caprai, M.
Caputo, D.
Caricato, A. P.
Catalano, R.
Cazzanelli, M.
Cirio, R.
Cirrone, G. A. P.
Cittadini, F.
Croci, T.
Cuttone, G.
de Cesare, G.
De Remigis, P.
Dunand, S.
Fabi, M.
Frontini, L.
Grimani, C.
Guarrera, M.
Hasnaoui, H.
Ionica, M.
Kanxheri, K.
Large, M.
Lenta, F.
Liberali, V.
Lovecchio, N.
Martino, M.
Maruccio, G.
Maruccio, L.
Mazza, G.
Monteduro, A. G.
Morozzi, A.
Nascetti, A.
Pallotta, S.
Papi, A.
Passeri, D.
Pedio, M.
Petasecca, M.
Petringa, G.
Peverini, F.
Placidi, P.
Polo, M.
Quaranta, A.
Quarta, G.
Rizzato, S.
Sabbatini, F.
Servoli, L.
Stabile, A.
Talamonti, C.
Thomet, J. E.
Mora, M. S. Vasquez
Villani, M.
Wheadon, R. J.
Wyrsch, N.
Zema, N.
Tosti, L.
Instrumentation and Detectors
Applied Physics
Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 um thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 um thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100°C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.
title Proton irradiation on Hydrogenated Amorphous Silicon flexible devices
topic Instrumentation and Detectors
Applied Physics
url https://arxiv.org/abs/2412.13124

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