Two types of colossal magnetoresistance with distinct mechanisms in Eu5In2As6
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arXiv
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| Format: | Preprint |
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2024
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| author | Balguri, Sudhaman Mahendru, Mira B. Delgado, Enrique O. Gonzalez Fruhling, Kyle Yao, Xiaohan Graf, David E. Rodriguez-Rivera, Jose A. Aczel, Adam A. Rydh, Andreas Gaudet, Jonathan Tafti, Fazel |
| author_facet | Balguri, Sudhaman Mahendru, Mira B. Delgado, Enrique O. Gonzalez Fruhling, Kyle Yao, Xiaohan Graf, David E. Rodriguez-Rivera, Jose A. Aczel, Adam A. Rydh, Andreas Gaudet, Jonathan Tafti, Fazel |
| contents | Recent reports of colossal negative magnetoresistance (CMR) in a few magnetic semimetals and semiconductors have attracted attention, because these materials are devoid of the conventional mechanisms of CMR such as mixed valence, double exchange interaction, and Jahn-Teller distortion. New mechanisms have thus been proposed, including topological band structure, ferromagnetic clusters, orbital currents, and charge ordering. The CMR in these compounds has been reported in two forms: either a resistivity peak or a resistivity upturn suppressed by a magnetic field. Here we reveal both types of CMR in a single antiferromagnetic semiconductor Eu5In2As6. Using the transport and thermodynamic measurements, we demonstrate that the peak-type CMR is likely due to the percolation of magnetic polarons with increasing magnetic field, while the upturn-type CMR is proposed to result from the melting of a charge order under the magnetic field. We argue that similar mechanisms operate in other compounds, offering a unifying framework to understand CMR in seemingly different materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_13361 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Two types of colossal magnetoresistance with distinct mechanisms in Eu5In2As6 Balguri, Sudhaman Mahendru, Mira B. Delgado, Enrique O. Gonzalez Fruhling, Kyle Yao, Xiaohan Graf, David E. Rodriguez-Rivera, Jose A. Aczel, Adam A. Rydh, Andreas Gaudet, Jonathan Tafti, Fazel Strongly Correlated Electrons Materials Science Recent reports of colossal negative magnetoresistance (CMR) in a few magnetic semimetals and semiconductors have attracted attention, because these materials are devoid of the conventional mechanisms of CMR such as mixed valence, double exchange interaction, and Jahn-Teller distortion. New mechanisms have thus been proposed, including topological band structure, ferromagnetic clusters, orbital currents, and charge ordering. The CMR in these compounds has been reported in two forms: either a resistivity peak or a resistivity upturn suppressed by a magnetic field. Here we reveal both types of CMR in a single antiferromagnetic semiconductor Eu5In2As6. Using the transport and thermodynamic measurements, we demonstrate that the peak-type CMR is likely due to the percolation of magnetic polarons with increasing magnetic field, while the upturn-type CMR is proposed to result from the melting of a charge order under the magnetic field. We argue that similar mechanisms operate in other compounds, offering a unifying framework to understand CMR in seemingly different materials. |
| title | Two types of colossal magnetoresistance with distinct mechanisms in Eu5In2As6 |
| topic | Strongly Correlated Electrons Materials Science |
| url | https://arxiv.org/abs/2412.13361 |