Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons

Fuente: arXiv

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Bibliographic Details
Main Authors:	Silva, C. Beirão da Cruz e, Marozzo, G., Da Molin, G., Hollar, J., Gallinaro, M., Khakzad, M., Kahjoq, S. Bashiri, Shchelina, K.
Format:	Preprint
Published:	2024
Subjects:	Instrumentation and Detectors High Energy Physics - Experiment
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2412.13780