Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866917967609987072 |
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| author | Silva, C. Beirão da Cruz e Marozzo, G. Da Molin, G. Hollar, J. Gallinaro, M. Khakzad, M. Kahjoq, S. Bashiri Shchelina, K. |
| author_facet | Silva, C. Beirão da Cruz e Marozzo, G. Da Molin, G. Hollar, J. Gallinaro, M. Khakzad, M. Kahjoq, S. Bashiri Shchelina, K. |
| contents | Forward proton spectrometers at high-energy proton colliders rely on precision timing to discriminate signal from background. Silicon low gain avalanche diodes (LGADs) are a candidate for future timing detectors in these systems. A major challenge for the use of LGADs is that these detectors must be placed within a few mm of the beams, resulting in a very large and highly non-uniform radiation environment. We present a first measurement of the current and capacitance vs. voltage behavior of LGAD sensors, after a highly non-uniform irradiation with beams of 24 GeV/c protons at fluences up to $1\times10^{16} p/cm^{2}$. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_13780 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons Silva, C. Beirão da Cruz e Marozzo, G. Da Molin, G. Hollar, J. Gallinaro, M. Khakzad, M. Kahjoq, S. Bashiri Shchelina, K. Instrumentation and Detectors High Energy Physics - Experiment Forward proton spectrometers at high-energy proton colliders rely on precision timing to discriminate signal from background. Silicon low gain avalanche diodes (LGADs) are a candidate for future timing detectors in these systems. A major challenge for the use of LGADs is that these detectors must be placed within a few mm of the beams, resulting in a very large and highly non-uniform radiation environment. We present a first measurement of the current and capacitance vs. voltage behavior of LGAD sensors, after a highly non-uniform irradiation with beams of 24 GeV/c protons at fluences up to $1\times10^{16} p/cm^{2}$. |
| title | Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons |
| topic | Instrumentation and Detectors High Energy Physics - Experiment |
| url | https://arxiv.org/abs/2412.13780 |