Unveiling intrinsic bulk photovoltaic effect in atomically thin ReS2
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arXiv
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| Autori principali: | , , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866929637656887296 |
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| author | Ramos, Maria Ahmed, Tanweer Tu, Bao Q. Chatzikyriakou, Eleni Olano-Vegas, Lucía Martín-García, Beatriz Calvo, M. Reyes Tsirkin, Stepan S. Souza, Ivo Casanova, Félix de Juan, Fernando Gobbi, Marco Hueso, Luis E. |
| author_facet | Ramos, Maria Ahmed, Tanweer Tu, Bao Q. Chatzikyriakou, Eleni Olano-Vegas, Lucía Martín-García, Beatriz Calvo, M. Reyes Tsirkin, Stepan S. Souza, Ivo Casanova, Félix de Juan, Fernando Gobbi, Marco Hueso, Luis E. |
| contents | The bulk photovoltaic effect (BPVE) offers a promising avenue to surpass the efficiency limitations of current solar cell technology. However, disentangling intrinsic and extrinsic contributions to photocurrent remains a significant challenge. Here, we fabricate high-quality, lateral devices based on atomically thin ReS2 with minimal contact resistance, providing an optimal platform for distinguishing intrinsic bulk photovoltaic signals from other extrinsic photocurrent contributions originating from interfacial effects. Our devices exhibit large bulk photovoltaic performance with intrinsic responsivities of 1 mA/W in the visible range, without the need for external tuning knobs such as strain engineering. Our experimental findings are supported by theoretical calculations. Furthermore, our approach can be extrapolated to investigate the intrinsic BPVE in other non-centrosymmetric van der Waals materials, paving the way for a new generation of efficient light-harvesting devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_13863 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Unveiling intrinsic bulk photovoltaic effect in atomically thin ReS2 Ramos, Maria Ahmed, Tanweer Tu, Bao Q. Chatzikyriakou, Eleni Olano-Vegas, Lucía Martín-García, Beatriz Calvo, M. Reyes Tsirkin, Stepan S. Souza, Ivo Casanova, Félix de Juan, Fernando Gobbi, Marco Hueso, Luis E. Mesoscale and Nanoscale Physics Materials Science The bulk photovoltaic effect (BPVE) offers a promising avenue to surpass the efficiency limitations of current solar cell technology. However, disentangling intrinsic and extrinsic contributions to photocurrent remains a significant challenge. Here, we fabricate high-quality, lateral devices based on atomically thin ReS2 with minimal contact resistance, providing an optimal platform for distinguishing intrinsic bulk photovoltaic signals from other extrinsic photocurrent contributions originating from interfacial effects. Our devices exhibit large bulk photovoltaic performance with intrinsic responsivities of 1 mA/W in the visible range, without the need for external tuning knobs such as strain engineering. Our experimental findings are supported by theoretical calculations. Furthermore, our approach can be extrapolated to investigate the intrinsic BPVE in other non-centrosymmetric van der Waals materials, paving the way for a new generation of efficient light-harvesting devices. |
| title | Unveiling intrinsic bulk photovoltaic effect in atomically thin ReS2 |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2412.13863 |