Artificial Neural Network based Modelling for Variational Effect on Double Metal Double Gate Negative Capacitance FET
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| Format: | Preprint |
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2024
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| author | Pathak, Yash Goswami, Laxman Prasad Malhotra, Bansi Dhar Chaujar, Rishu |
| author_facet | Pathak, Yash Goswami, Laxman Prasad Malhotra, Bansi Dhar Chaujar, Rishu |
| contents | In this work, we have implemented an accurate machine-learning approach for predicting various key analog and RF parameters of Negative Capacitance Field-Effect Transistors (NCFETs). Visual TCAD simulator and the Python high-level language were employed for the entire simulation process. However, the computational cost was found to be excessively high. The machine learning approach represents a novel method for predicting the effects of different sources on NCFETs while also reducing computational costs. The algorithm of an artificial neural network can effectively predict multi-input to single-output relationships and enhance existing techniques. The analog parameters of Double Metal Double Gate Negative Capacitance FETs (D2GNCFETs) are demonstrated across various temperatures ($T$), oxide thicknesses ($T_{ox}$), substrate thicknesses ($T_{sub}$), and ferroelectric thicknesses ($T_{Fe}$). Notably, at $T=300K$, the switching ratio is higher and the leakage current is $84$ times lower compared to $T=500K$. Similarly, at ferroelectric thicknesses $T_{Fe}=4nm$, the switching ratio improves by $5.4$ times compared to $T_{Fe}=8nm$. Furthermore, at substrate thicknesses $T_{sub}=3nm$, switching ratio increases by $81\%$ from $T_{sub}=7nm$. For oxide thicknesses at $T_{ox}=0.8nm$, the ratio increases by $41\%$ compared to $T_{ox}=0.4nm$. The analysis reveals that $T_{Fe}=4nm$, $T=300K$, $T_{ox}=0.8nm$, and $T_{sub}=3nm$ represent the optimal settings for D2GNCFETs, resulting in significantly improved performance. These findings can inform various applications in nanoelectronic devices and integrated circuit (IC) design. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2412_14216 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Artificial Neural Network based Modelling for Variational Effect on Double Metal Double Gate Negative Capacitance FET Pathak, Yash Goswami, Laxman Prasad Malhotra, Bansi Dhar Chaujar, Rishu Materials Science Applied Physics In this work, we have implemented an accurate machine-learning approach for predicting various key analog and RF parameters of Negative Capacitance Field-Effect Transistors (NCFETs). Visual TCAD simulator and the Python high-level language were employed for the entire simulation process. However, the computational cost was found to be excessively high. The machine learning approach represents a novel method for predicting the effects of different sources on NCFETs while also reducing computational costs. The algorithm of an artificial neural network can effectively predict multi-input to single-output relationships and enhance existing techniques. The analog parameters of Double Metal Double Gate Negative Capacitance FETs (D2GNCFETs) are demonstrated across various temperatures ($T$), oxide thicknesses ($T_{ox}$), substrate thicknesses ($T_{sub}$), and ferroelectric thicknesses ($T_{Fe}$). Notably, at $T=300K$, the switching ratio is higher and the leakage current is $84$ times lower compared to $T=500K$. Similarly, at ferroelectric thicknesses $T_{Fe}=4nm$, the switching ratio improves by $5.4$ times compared to $T_{Fe}=8nm$. Furthermore, at substrate thicknesses $T_{sub}=3nm$, switching ratio increases by $81\%$ from $T_{sub}=7nm$. For oxide thicknesses at $T_{ox}=0.8nm$, the ratio increases by $41\%$ compared to $T_{ox}=0.4nm$. The analysis reveals that $T_{Fe}=4nm$, $T=300K$, $T_{ox}=0.8nm$, and $T_{sub}=3nm$ represent the optimal settings for D2GNCFETs, resulting in significantly improved performance. These findings can inform various applications in nanoelectronic devices and integrated circuit (IC) design. |
| title | Artificial Neural Network based Modelling for Variational Effect on Double Metal Double Gate Negative Capacitance FET |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2412.14216 |