Liao, H., Zheng, Z., Shu, J., & Chen, K. J. (2024). Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in p-GaN Gate Double Channel HEMT.
Chicago Style (17th ed.) CitationLiao, Hang, Zheyang Zheng, Ji Shu, and Kevin J. Chen. Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in P-GaN Gate Double Channel HEMT. 2024.
MLA (9th ed.) CitationLiao, Hang, et al. Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in P-GaN Gate Double Channel HEMT. 2024.
Warning: These citations may not always be 100% accurate.