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| Hauptverfasser: | , , , |
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| Format: | Preprint |
| Veröffentlicht: |
2024
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| Online-Zugang: | https://arxiv.org/abs/2412.14279 |
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| _version_ | 1866910752126795776 |
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| author | Liao, Hang Zheng, Zheyang Shu, Ji Chen, Kevin J. |
| author_facet | Liao, Hang Zheng, Zheyang Shu, Ji Chen, Kevin J. |
| contents | Recently, a p-GaN gate double channel HEMT (DC-HEMT) with conductivity modulation has been reported. The conductivity modulation is realized by hole storage in the gate stack and observed under quasi-static measurements. In this work, pulsed measurement and transient simulations of the DC-HEMT are carried out to disclose the conductivity modulation at high frequency and build-up time of hole storage. It takes 150 ns for the hole storage to be completely established despite a Schottky gate in the DC-HEMT with low gate leakage. The fast build-up of hole storage is attributed to the AlN insertion layer's strong confinement capability of holes and suppressed electron-hole recombination in the DC structure. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_14279 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in p-GaN Gate Double Channel HEMT Liao, Hang Zheng, Zheyang Shu, Ji Chen, Kevin J. Applied Physics Recently, a p-GaN gate double channel HEMT (DC-HEMT) with conductivity modulation has been reported. The conductivity modulation is realized by hole storage in the gate stack and observed under quasi-static measurements. In this work, pulsed measurement and transient simulations of the DC-HEMT are carried out to disclose the conductivity modulation at high frequency and build-up time of hole storage. It takes 150 ns for the hole storage to be completely established despite a Schottky gate in the DC-HEMT with low gate leakage. The fast build-up of hole storage is attributed to the AlN insertion layer's strong confinement capability of holes and suppressed electron-hole recombination in the DC structure. |
| title | Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in p-GaN Gate Double Channel HEMT |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2412.14279 |