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Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in p-GaN Gate Double Channel HEMT

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Liao, Hang, Zheng, Zheyang, Shu, Ji, Chen, Kevin J.
Formato:	Preprint
Publicado:	2024
Materias:	Applied Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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