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| Main Authors: | , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2412.14279 |
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Table of Contents:
- Recently, a p-GaN gate double channel HEMT (DC-HEMT) with conductivity modulation has been reported. The conductivity modulation is realized by hole storage in the gate stack and observed under quasi-static measurements. In this work, pulsed measurement and transient simulations of the DC-HEMT are carried out to disclose the conductivity modulation at high frequency and build-up time of hole storage. It takes 150 ns for the hole storage to be completely established despite a Schottky gate in the DC-HEMT with low gate leakage. The fast build-up of hole storage is attributed to the AlN insertion layer's strong confinement capability of holes and suppressed electron-hole recombination in the DC structure.