Numerical analysis and simulation of lateral memristive devices: Schottky, ohmic, and multi-dimensional electrode models

Documenti analoghi

• Existence of solutions and uniform bounds for the stationary semiconductor equations with generation and ionic carriers
  di: Abdel, Dilara, et al.
  Pubblicazione: (2025)
• Finite Volumes for a dissipative free boundary problem
  di: Cancès, Clément, et al.
  Pubblicazione: (2025)
• Charge transport systems with Fermi-Dirac statistics for memristors
  di: Herda, Maxime, et al.
  Pubblicazione: (2024)
• Homogenization of Poisson-Nernst-Planck equations for multiple species in a porous medium
  di: Bhattacharya, Apratim
  Pubblicazione: (2024)
• Uniqueness and regularity of weak solutions of a drift-diffusion system for perovskite solar cells
  di: Glitzky, Annegret, et al.
  Pubblicazione: (2024)