Room-temperature Distributed Feedback CsPbBr$_3$ Perovskite Laser Integrated on a Silicon Nitride Waveguide Platform
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| Format: | Preprint |
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2024
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| author | Fabrizi, Federico Cegielski, Piotr J. Goudarzi, Saeed Kurahashi, Naho Runkel, Manuel Kreusel, Cedric Chmielak, Bartos Suckow, Stephan Riedl, Thomas Anantharaman, Surendra B. Mohammadi, Maryam Lemme, Max C. |
| author_facet | Fabrizi, Federico Cegielski, Piotr J. Goudarzi, Saeed Kurahashi, Naho Runkel, Manuel Kreusel, Cedric Chmielak, Bartos Suckow, Stephan Riedl, Thomas Anantharaman, Surendra B. Mohammadi, Maryam Lemme, Max C. |
| contents | Silicon photonic integrated circuits (PICs) require cost-effective laser sources that can be monolithically integrated. The low cost and low-temperature solution processability of metal halide perovskites (MHPs) make them attractive alternatives to established III-V compound semiconductors for on-chip laser sources in PICs. Cesium lead bromide (CsPbBr$_3$) perovskites are emerging materials for green light-emitting diodes and lasers. To date, amplified spontaneous emission (ASE) at room temperature has been frequently achieved in CsPbBr$_3$ thin films, while reports on lasing are more limited. Here, we demonstrate a first-order grating distributed feedback (DFB) CsPbBr$_3$ thin-film laser operating at room temperature. Planar hot-pressed (PHP)-CsPbBr$_}$, with a low ASE threshold of 14.5 $μ$Jcm$^{-2}$ under 0.3 nanosecond (ns) pump pulses, was monolithically integrated into a silicon nitride (Si$_3$N$_4$) waveguide platform via a compatible top-down patterning process. The first-order grating DFB PHP-CsPbBr$_3$ thin-film laser operated at 540 nm in the green spectral region, where III-V lasers have limitations, and exhibited a lasing threshold of 0.755 mJcm$^{-2}$ at room temperature. This work marks a significant step toward utilizing MHPs for on-chip green lasers in PICs for commercial applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_15245 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Room-temperature Distributed Feedback CsPbBr$_3$ Perovskite Laser Integrated on a Silicon Nitride Waveguide Platform Fabrizi, Federico Cegielski, Piotr J. Goudarzi, Saeed Kurahashi, Naho Runkel, Manuel Kreusel, Cedric Chmielak, Bartos Suckow, Stephan Riedl, Thomas Anantharaman, Surendra B. Mohammadi, Maryam Lemme, Max C. Applied Physics Materials Science Silicon photonic integrated circuits (PICs) require cost-effective laser sources that can be monolithically integrated. The low cost and low-temperature solution processability of metal halide perovskites (MHPs) make them attractive alternatives to established III-V compound semiconductors for on-chip laser sources in PICs. Cesium lead bromide (CsPbBr$_3$) perovskites are emerging materials for green light-emitting diodes and lasers. To date, amplified spontaneous emission (ASE) at room temperature has been frequently achieved in CsPbBr$_3$ thin films, while reports on lasing are more limited. Here, we demonstrate a first-order grating distributed feedback (DFB) CsPbBr$_3$ thin-film laser operating at room temperature. Planar hot-pressed (PHP)-CsPbBr$_}$, with a low ASE threshold of 14.5 $μ$Jcm$^{-2}$ under 0.3 nanosecond (ns) pump pulses, was monolithically integrated into a silicon nitride (Si$_3$N$_4$) waveguide platform via a compatible top-down patterning process. The first-order grating DFB PHP-CsPbBr$_3$ thin-film laser operated at 540 nm in the green spectral region, where III-V lasers have limitations, and exhibited a lasing threshold of 0.755 mJcm$^{-2}$ at room temperature. This work marks a significant step toward utilizing MHPs for on-chip green lasers in PICs for commercial applications. |
| title | Room-temperature Distributed Feedback CsPbBr$_3$ Perovskite Laser Integrated on a Silicon Nitride Waveguide Platform |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2412.15245 |