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| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2412.15421 |
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| _version_ | 1866914191878651904 |
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| author | Steele, Julian A. Strohbeen, Patrick J. Verdi, Carla Baktash, Ardeshir Danilenko, Alisa Chen, Yi-Hsun van Dijk, Jechiel Knudsen, Frederik H. Leblanc, Axel Perconte, David Wang, Lianzhou Demler, Eugene Salmani-Rezaie, Salva Jacobson, Peter Shabani, Javad |
| author_facet | Steele, Julian A. Strohbeen, Patrick J. Verdi, Carla Baktash, Ardeshir Danilenko, Alisa Chen, Yi-Hsun van Dijk, Jechiel Knudsen, Frederik H. Leblanc, Axel Perconte, David Wang, Lianzhou Demler, Eugene Salmani-Rezaie, Salva Jacobson, Peter Shabani, Javad |
| contents | Doping-induced superconductivity in group IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group III atoms into C, Si, or Ge can yield superconductivity; however, its origin is obscured by structural disorder and dopant clustering. Here, we report the epitaxial growth of hyperdoped Ga:Ge films and trilayer heterostructures by molecular beam epitaxy with extreme hole concentrations ($n_\textup{h} = 4.15 \times 10^{21}$~cm$^{-3}$, ~17.9\% Ga substitution) that yield superconductivity with a critical temperature of $T_{\textup{c}} = 3.5$~K and an out-of-plane critical field of 1~T at 270~mK. Synchrotron-based X-ray absorption and scattering methods reveal that Ga dopants are substitutionally incorporated within the Ge lattice, introducing a tetragonal distortion to the crystal unit cell. Our findings, corroborated by first-principles calculations, suggest that the structural order of Ga dopants creates a narrow band for the emergence of superconductivity in Ge, establishing hyperdoped Ga:Ge as a low-disorder, epitaxial superconductor-semiconductor platform. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_15421 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Superconductivity in Substitutional Ga-Hyperdoped Ge Epitaxial Thin Films Steele, Julian A. Strohbeen, Patrick J. Verdi, Carla Baktash, Ardeshir Danilenko, Alisa Chen, Yi-Hsun van Dijk, Jechiel Knudsen, Frederik H. Leblanc, Axel Perconte, David Wang, Lianzhou Demler, Eugene Salmani-Rezaie, Salva Jacobson, Peter Shabani, Javad Mesoscale and Nanoscale Physics Materials Science Doping-induced superconductivity in group IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group III atoms into C, Si, or Ge can yield superconductivity; however, its origin is obscured by structural disorder and dopant clustering. Here, we report the epitaxial growth of hyperdoped Ga:Ge films and trilayer heterostructures by molecular beam epitaxy with extreme hole concentrations ($n_\textup{h} = 4.15 \times 10^{21}$~cm$^{-3}$, ~17.9\% Ga substitution) that yield superconductivity with a critical temperature of $T_{\textup{c}} = 3.5$~K and an out-of-plane critical field of 1~T at 270~mK. Synchrotron-based X-ray absorption and scattering methods reveal that Ga dopants are substitutionally incorporated within the Ge lattice, introducing a tetragonal distortion to the crystal unit cell. Our findings, corroborated by first-principles calculations, suggest that the structural order of Ga dopants creates a narrow band for the emergence of superconductivity in Ge, establishing hyperdoped Ga:Ge as a low-disorder, epitaxial superconductor-semiconductor platform. |
| title | Superconductivity in Substitutional Ga-Hyperdoped Ge Epitaxial Thin Films |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2412.15421 |