Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

Fuente: arXiv
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Autori principali: Geiskopf, S., Igarashi, J., Malinowski, G., Lin, J. -X., Gorchon, J., Mangin, S., Hohlfeld, J., Lacour, D., Hehn, M.
Natura: Preprint
Pubblicazione: 2024
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author Geiskopf, S.
Igarashi, J.
Malinowski, G.
Lin, J. -X.
Gorchon, J.
Mangin, S.
Hohlfeld, J.
Lacour, D.
Hehn, M.
author_facet Geiskopf, S.
Igarashi, J.
Malinowski, G.
Lin, J. -X.
Gorchon, J.
Mangin, S.
Hohlfeld, J.
Lacour, D.
Hehn, M.
contents Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20 with a 10nm thick Co85Gd15 layer monitored by measuring the Tunnel magneto resistance of the device. The use of in plane magnetized electrodes relaxes the constrains linked to perpendicular magnetic anisotropy systems while achieving a tunneling magnetoresistance (TMR) ratio exceeding 100%. The influence of the upper electrical electrode, which is opaque to the laser beam in this study, is also discussed.
format Preprint
id arxiv_https___arxiv_org_abs_2412_16005
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction
Geiskopf, S.
Igarashi, J.
Malinowski, G.
Lin, J. -X.
Gorchon, J.
Mangin, S.
Hohlfeld, J.
Lacour, D.
Hehn, M.
Materials Science
Mesoscale and Nanoscale Physics
Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20 with a 10nm thick Co85Gd15 layer monitored by measuring the Tunnel magneto resistance of the device. The use of in plane magnetized electrodes relaxes the constrains linked to perpendicular magnetic anisotropy systems while achieving a tunneling magnetoresistance (TMR) ratio exceeding 100%. The influence of the upper electrical electrode, which is opaque to the laser beam in this study, is also discussed.
title Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2412.16005