Engineering high-Q superconducting tantalum microwave coplanar waveguide resonators for compact coherent quantum circuits

Fuente: arXiv
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Main Authors: Poorgholam-Khanjari, Shima, Seferai, Valentino, Foshat, Paniz, Rose, Calum, Feng, Hua, Hadfield, Robert H., Weides, Martin, Delfanazari, Kaveh
Format: Preprint
Published: 2024
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author Poorgholam-Khanjari, Shima
Seferai, Valentino
Foshat, Paniz
Rose, Calum
Feng, Hua
Hadfield, Robert H.
Weides, Martin
Delfanazari, Kaveh
author_facet Poorgholam-Khanjari, Shima
Seferai, Valentino
Foshat, Paniz
Rose, Calum
Feng, Hua
Hadfield, Robert H.
Weides, Martin
Delfanazari, Kaveh
contents Tantalum (Ta) has recently received considerable attention in manufacturing robust superconducting quantum circuits. Ta offers low microwave loss, high kinetic inductance compared to aluminium (Al) and niobium (Nb), and good compatibility with complementary metal-oxide-semiconductor (CMOS) technology, which is essential for quantum computing applications. Here, we demonstrate the fabrication engineering of thickness-dependent high quality factor (high-Q_i) Ta superconducting microwave coplanar waveguide resonators. All films are deposited on high-resistivity silicon substrates at room temperature without additional substrate heating. Before Ta deposition, a niobium (Nb) seed layer is used to ensure a body-centred cubic lattice (α-Ta) formation. We further engineer the kinetic inductance (L_K) resonators by varying Ta film thicknesses. High L_K is a key advantage for applications because it facilitates the realisation of high-impedance, compact quantum circuits with enhanced coupling to qubits. The maximum internal quality factor Q_i of ~ 3.6 * 10^6 is achieved at the high power regime for 100 nm Ta, while the highest kinetic inductance is obtained to be 0.6 pH/sq for the thinnest film, which is 40 nm. This combination of high Q_i and high L_K highlights the potential of Ta microwave circuits for high-fidelity operations of compact quantum circuits.
format Preprint
id arxiv_https___arxiv_org_abs_2412_16099
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Engineering high-Q superconducting tantalum microwave coplanar waveguide resonators for compact coherent quantum circuits
Poorgholam-Khanjari, Shima
Seferai, Valentino
Foshat, Paniz
Rose, Calum
Feng, Hua
Hadfield, Robert H.
Weides, Martin
Delfanazari, Kaveh
Quantum Physics
Superconductivity
Systems and Control
Applied Physics
Tantalum (Ta) has recently received considerable attention in manufacturing robust superconducting quantum circuits. Ta offers low microwave loss, high kinetic inductance compared to aluminium (Al) and niobium (Nb), and good compatibility with complementary metal-oxide-semiconductor (CMOS) technology, which is essential for quantum computing applications. Here, we demonstrate the fabrication engineering of thickness-dependent high quality factor (high-Q_i) Ta superconducting microwave coplanar waveguide resonators. All films are deposited on high-resistivity silicon substrates at room temperature without additional substrate heating. Before Ta deposition, a niobium (Nb) seed layer is used to ensure a body-centred cubic lattice (α-Ta) formation. We further engineer the kinetic inductance (L_K) resonators by varying Ta film thicknesses. High L_K is a key advantage for applications because it facilitates the realisation of high-impedance, compact quantum circuits with enhanced coupling to qubits. The maximum internal quality factor Q_i of ~ 3.6 * 10^6 is achieved at the high power regime for 100 nm Ta, while the highest kinetic inductance is obtained to be 0.6 pH/sq for the thinnest film, which is 40 nm. This combination of high Q_i and high L_K highlights the potential of Ta microwave circuits for high-fidelity operations of compact quantum circuits.
title Engineering high-Q superconducting tantalum microwave coplanar waveguide resonators for compact coherent quantum circuits
topic Quantum Physics
Superconductivity
Systems and Control
Applied Physics
url https://arxiv.org/abs/2412.16099