Highly efficient broadband THz upconversion with Dirac materials
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arXiv
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| Auteurs principaux: | , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866914281870589952 |
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| author | Svetikova, Tatiana A. Uaman Ilyakov, Igor Ponomaryov, Alexey de Oliveira, Thales V. A. G. Berger, Christian Fürst, Lena Bayer, Florian Deinert, Jan-Christoph Prajapati, Gulloo Lal Arshad, Atiqa Novik, Elena G. Pashkin, Alexej Helm, Manfred Winnerl, Stephan Buhmann, Hartmut Molenkamp, Laurens W. Kiessling, Tobias Kovalev, Sergey Astakhov, Georgy V. |
| author_facet | Svetikova, Tatiana A. Uaman Ilyakov, Igor Ponomaryov, Alexey de Oliveira, Thales V. A. G. Berger, Christian Fürst, Lena Bayer, Florian Deinert, Jan-Christoph Prajapati, Gulloo Lal Arshad, Atiqa Novik, Elena G. Pashkin, Alexej Helm, Manfred Winnerl, Stephan Buhmann, Hartmut Molenkamp, Laurens W. Kiessling, Tobias Kovalev, Sergey Astakhov, Georgy V. |
| contents | The use of the THz frequency domain in future network generations offers an unparalleled level of capacity, which can enhance innovative applications in wireless communication, analytics, and imaging. Communication technologies rely on frequency mixing, enabling signals to be converted from one frequency to another and transmitted from a sender to a receiver. Technically, this process is implemented using nonlinear components such as diodes or transistors. However, the highest operation frequency of this approach is limited to sub-THz bands. Here, we demonstrate the upconversion of a weak sub-THz signal from a photoconductive antenna to multiple THz bands. The key element is a high-mobility HgTe-based heterostructure with electronic band inversion, leading to one of the strongest third-order nonlinearities among all materials in the THz range. Due to the Dirac character of electron dispersion, the highly intense sub-THz radiation is efficiently mixed with the antenna signal, resulting in a THz response at linear combinations of their frequencies. The field conversion efficiency above 2$\%$ is provided by a bare tensile-strained HgTe layer with a thickness below 100 nm at room temperature under ambient conditions. Devices based on Dirac materials allow for high degree of integration, with field-enhancing metamaterial structures, making them very promising for THz communication with unprecedented data transfer rate. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_17179 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Highly efficient broadband THz upconversion with Dirac materials Svetikova, Tatiana A. Uaman Ilyakov, Igor Ponomaryov, Alexey de Oliveira, Thales V. A. G. Berger, Christian Fürst, Lena Bayer, Florian Deinert, Jan-Christoph Prajapati, Gulloo Lal Arshad, Atiqa Novik, Elena G. Pashkin, Alexej Helm, Manfred Winnerl, Stephan Buhmann, Hartmut Molenkamp, Laurens W. Kiessling, Tobias Kovalev, Sergey Astakhov, Georgy V. Optics The use of the THz frequency domain in future network generations offers an unparalleled level of capacity, which can enhance innovative applications in wireless communication, analytics, and imaging. Communication technologies rely on frequency mixing, enabling signals to be converted from one frequency to another and transmitted from a sender to a receiver. Technically, this process is implemented using nonlinear components such as diodes or transistors. However, the highest operation frequency of this approach is limited to sub-THz bands. Here, we demonstrate the upconversion of a weak sub-THz signal from a photoconductive antenna to multiple THz bands. The key element is a high-mobility HgTe-based heterostructure with electronic band inversion, leading to one of the strongest third-order nonlinearities among all materials in the THz range. Due to the Dirac character of electron dispersion, the highly intense sub-THz radiation is efficiently mixed with the antenna signal, resulting in a THz response at linear combinations of their frequencies. The field conversion efficiency above 2$\%$ is provided by a bare tensile-strained HgTe layer with a thickness below 100 nm at room temperature under ambient conditions. Devices based on Dirac materials allow for high degree of integration, with field-enhancing metamaterial structures, making them very promising for THz communication with unprecedented data transfer rate. |
| title | Highly efficient broadband THz upconversion with Dirac materials |
| topic | Optics |
| url | https://arxiv.org/abs/2412.17179 |