Simultaneous achievement of record-breaking colossal magnetoresistance and angular magnetoresistance in an antiferromagnetic semiconductor EuSe2
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , , , , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2024
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866917877426159616 |
|---|---|
| author | Dong, Qingxin Yang, Pengtao Liu, Zhihao Wang, Yuzhi Liu, Ziyi Shi, Tong Tian, Zhaoming Sun, Jianping Uwatoko, Yoshiya Wu, Quansheng Chen, Genfu Wang, Bosen Cheng, Jinguang |
| author_facet | Dong, Qingxin Yang, Pengtao Liu, Zhihao Wang, Yuzhi Liu, Ziyi Shi, Tong Tian, Zhaoming Sun, Jianping Uwatoko, Yoshiya Wu, Quansheng Chen, Genfu Wang, Bosen Cheng, Jinguang |
| contents | Magnetoresistance effect lays the foundation for spintronics, magnetic sensors and hard drives. The pursuit of magnetic materials with colossal magnetoresistance (CMR) and/or angular magnetoresistance (AMR) has attracted enduring research interest and extensive investigations over past decades. Here we report on the discovery of field-induced record-breaking CMR of ~ -10^14 % and AMR ~ 10^14% achieved simultaneously in an antiferromagnetic rare-earth dichalcogenide EuSe2. Such intriguing observations are attributed to strong magnetic anisotropy and magnetic-field induced antiferromagnetic to ferromagnetic transition of the localized Eu2+ spins, which in turn closes the bandgap by lifting the degeneracy of Se-5p bands near Fermi level. Our DFT calculations perfectly replicate the experimental findings based on the Brillouin function and carries transport model. The present work provides a potential simple antiferromagnetic material for achieving angle-sensitive spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_17594 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Simultaneous achievement of record-breaking colossal magnetoresistance and angular magnetoresistance in an antiferromagnetic semiconductor EuSe2 Dong, Qingxin Yang, Pengtao Liu, Zhihao Wang, Yuzhi Liu, Ziyi Shi, Tong Tian, Zhaoming Sun, Jianping Uwatoko, Yoshiya Wu, Quansheng Chen, Genfu Wang, Bosen Cheng, Jinguang Strongly Correlated Electrons Materials Science Magnetoresistance effect lays the foundation for spintronics, magnetic sensors and hard drives. The pursuit of magnetic materials with colossal magnetoresistance (CMR) and/or angular magnetoresistance (AMR) has attracted enduring research interest and extensive investigations over past decades. Here we report on the discovery of field-induced record-breaking CMR of ~ -10^14 % and AMR ~ 10^14% achieved simultaneously in an antiferromagnetic rare-earth dichalcogenide EuSe2. Such intriguing observations are attributed to strong magnetic anisotropy and magnetic-field induced antiferromagnetic to ferromagnetic transition of the localized Eu2+ spins, which in turn closes the bandgap by lifting the degeneracy of Se-5p bands near Fermi level. Our DFT calculations perfectly replicate the experimental findings based on the Brillouin function and carries transport model. The present work provides a potential simple antiferromagnetic material for achieving angle-sensitive spintronic devices. |
| title | Simultaneous achievement of record-breaking colossal magnetoresistance and angular magnetoresistance in an antiferromagnetic semiconductor EuSe2 |
| topic | Strongly Correlated Electrons Materials Science |
| url | https://arxiv.org/abs/2412.17594 |