Growth of bulk crystals of magnetic topological insulators under peritectic conditions

Fuente: arXiv
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Main Authors: Sergeev, Anton I., Frolov, Alexander S., Vladimirova, Nadezhda V., Naumov, Arseny A., Kirsanova, Maria, Naumov, Mark A., Stolyarov, Vasily S., Golyashov, Vladimir A., Tereshchenko, Oleg E., Klimovskikh, Ilya I., Tamm, Marina E., Yashina, Lada V.
Format: Preprint
Published: 2024
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author Sergeev, Anton I.
Frolov, Alexander S.
Vladimirova, Nadezhda V.
Naumov, Arseny A.
Kirsanova, Maria
Naumov, Mark A.
Stolyarov, Vasily S.
Golyashov, Vladimir A.
Tereshchenko, Oleg E.
Klimovskikh, Ilya I.
Tamm, Marina E.
Yashina, Lada V.
author_facet Sergeev, Anton I.
Frolov, Alexander S.
Vladimirova, Nadezhda V.
Naumov, Arseny A.
Kirsanova, Maria
Naumov, Mark A.
Stolyarov, Vasily S.
Golyashov, Vladimir A.
Tereshchenko, Oleg E.
Klimovskikh, Ilya I.
Tamm, Marina E.
Yashina, Lada V.
contents Magnetic topological materials (MTIs) including MnBi$_2$Te$_4$ are of scientific interest due to the possibility to reveal the interplay between topological and magnetic orders. For these materials preparation issues are still challenging. In our paper we report new synthetic protocol using two-phase source in Bridgman-like growth procedure. We applied it to grow a number of TIs of GeAs$_2$Te$_4$ structural type including individual compounds MnBi$_2$Te$_4$, MnSb$_2$Te$_4$, GeBi$_2$Te$_4$, SnBi$_2$Te$_4$, PbBi$_2$Te$_4$ and several mixed crystals of whole range of compositions: Mn(Bi,Sb)$_2$Te$_4$, (Ge,Mn)Bi$_2$Te$_4$, new materials Mn(Bi,In)$_2$Te$_4$. The method developed can be used to obtain single crystals of any incongruently melted compounds with small region of primary crystallization from melt in the corresponding equilibrium phase diagrams.
format Preprint
id arxiv_https___arxiv_org_abs_2412_17915
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Growth of bulk crystals of magnetic topological insulators under peritectic conditions
Sergeev, Anton I.
Frolov, Alexander S.
Vladimirova, Nadezhda V.
Naumov, Arseny A.
Kirsanova, Maria
Naumov, Mark A.
Stolyarov, Vasily S.
Golyashov, Vladimir A.
Tereshchenko, Oleg E.
Klimovskikh, Ilya I.
Tamm, Marina E.
Yashina, Lada V.
Materials Science
Other Condensed Matter
Magnetic topological materials (MTIs) including MnBi$_2$Te$_4$ are of scientific interest due to the possibility to reveal the interplay between topological and magnetic orders. For these materials preparation issues are still challenging. In our paper we report new synthetic protocol using two-phase source in Bridgman-like growth procedure. We applied it to grow a number of TIs of GeAs$_2$Te$_4$ structural type including individual compounds MnBi$_2$Te$_4$, MnSb$_2$Te$_4$, GeBi$_2$Te$_4$, SnBi$_2$Te$_4$, PbBi$_2$Te$_4$ and several mixed crystals of whole range of compositions: Mn(Bi,Sb)$_2$Te$_4$, (Ge,Mn)Bi$_2$Te$_4$, new materials Mn(Bi,In)$_2$Te$_4$. The method developed can be used to obtain single crystals of any incongruently melted compounds with small region of primary crystallization from melt in the corresponding equilibrium phase diagrams.
title Growth of bulk crystals of magnetic topological insulators under peritectic conditions
topic Materials Science
Other Condensed Matter
url https://arxiv.org/abs/2412.17915