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Hauptverfasser: Cao, Cuimei, Duan, Wei, Feng, Xiaoyu, Xu, Yan, Wang, Yihan, Yang, Zhenzhong, Zhan, Qingfeng, You, Long
Format: Preprint
Veröffentlicht: 2024
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Online-Zugang:https://arxiv.org/abs/2412.18418
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author Cao, Cuimei
Duan, Wei
Feng, Xiaoyu
Xu, Yan
Wang, Yihan
Yang, Zhenzhong
Zhan, Qingfeng
You, Long
author_facet Cao, Cuimei
Duan, Wei
Feng, Xiaoyu
Xu, Yan
Wang, Yihan
Yang, Zhenzhong
Zhan, Qingfeng
You, Long
contents Neuromorphic computing, which seeks to replicate the brain's ability to process information, has garnered significant attention due to its potential to achieve brain-like computing efficiency and human cognitive intelligence. Spin-orbit torque (SOT) devices can be used to simulate artificial synapses with non-volatile, high-speed processing and endurance characteristics. Nevertheless, achieving energy-efficient all-electric synaptic plasticity emulation using SOT devices remains a challenge. We chose the noncollinear antiferromagnetic Mn3Pt as spin source to fabricate the Mn3Pt-based SOT device, leveraging its unconventional spin current resulting from magnetic space breaking. By adjusting the amplitude, duration, and number of pulsed currents, the Mn3Pt-based SOT device achieves nonvolatile multi-state modulated by all-electric SOT switching, enabling emulate synaptic behaviors like excitatory postsynaptic potential (EPSP), inhibitory postsynaptic potential (IPSP), long-term depression (LTD) and the long-term potentiation (LTP) process. In addition, we show the successful training of an artificial neural network based on such SOT device in recognizing handwritten digits with a high recognition accuracy of 94.95 %, which is only slightly lower than that from simulations (98.04 %). These findings suggest that the Mn3Pt-based SOT device is a promising candidate for the implementation of memristor-based brain-inspired computing systems.
format Preprint
id arxiv_https___arxiv_org_abs_2412_18418
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle All-electric mimicking synaptic plasticity based on the noncollinear antiferromagnetic device
Cao, Cuimei
Duan, Wei
Feng, Xiaoyu
Xu, Yan
Wang, Yihan
Yang, Zhenzhong
Zhan, Qingfeng
You, Long
Applied Physics
Neuromorphic computing, which seeks to replicate the brain's ability to process information, has garnered significant attention due to its potential to achieve brain-like computing efficiency and human cognitive intelligence. Spin-orbit torque (SOT) devices can be used to simulate artificial synapses with non-volatile, high-speed processing and endurance characteristics. Nevertheless, achieving energy-efficient all-electric synaptic plasticity emulation using SOT devices remains a challenge. We chose the noncollinear antiferromagnetic Mn3Pt as spin source to fabricate the Mn3Pt-based SOT device, leveraging its unconventional spin current resulting from magnetic space breaking. By adjusting the amplitude, duration, and number of pulsed currents, the Mn3Pt-based SOT device achieves nonvolatile multi-state modulated by all-electric SOT switching, enabling emulate synaptic behaviors like excitatory postsynaptic potential (EPSP), inhibitory postsynaptic potential (IPSP), long-term depression (LTD) and the long-term potentiation (LTP) process. In addition, we show the successful training of an artificial neural network based on such SOT device in recognizing handwritten digits with a high recognition accuracy of 94.95 %, which is only slightly lower than that from simulations (98.04 %). These findings suggest that the Mn3Pt-based SOT device is a promising candidate for the implementation of memristor-based brain-inspired computing systems.
title All-electric mimicking synaptic plasticity based on the noncollinear antiferromagnetic device
topic Applied Physics
url https://arxiv.org/abs/2412.18418