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Hauptverfasser: Tian, Qikun, Yang, Qi, Huang, An, Peng, Bo, Zhang, Jinbo, Zheng, Xiong, Zhou, Jian, Qin, Zhenzhen, Qin, Guangzhao
Format: Preprint
Veröffentlicht: 2024
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Online-Zugang:https://arxiv.org/abs/2412.18461
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author Tian, Qikun
Yang, Qi
Huang, An
Peng, Bo
Zhang, Jinbo
Zheng, Xiong
Zhou, Jian
Qin, Zhenzhen
Qin, Guangzhao
author_facet Tian, Qikun
Yang, Qi
Huang, An
Peng, Bo
Zhang, Jinbo
Zheng, Xiong
Zhou, Jian
Qin, Zhenzhen
Qin, Guangzhao
contents Anisotropic heat transfer offers promising solutions to the efficient heat dissipation in the realm of electronic device thermal management. However, the fundamental origin of the anisotropy of thermal transport remains mysterious. In this paper, by combining frequency domain thermoreflectance (FDTR) technique and first-principles-based multiscale simulations, we report the intrinsic anisotropy of thermal transport in bulk CrOCl, and further trace the origin of the anisotropy back to the fundamental electronic structures. The in-plane and cross-plane thermal conductivities ($κ$) at 300 K are found to be 21.6 and 2.18 Wm$^{-1}$K$^{-1}$, respectively, showcasing a strong $κ_\mathrm{in-plane}/κ_\mathrm{cross-plane}$ ratio of $\sim$10. Deep analysis of orbital-resolved electronic structures reveals that electrons are mainly distributed along the in-plane direction with limited interlayer distribution along the cross-plane direction, fundamentally leading to the intrinsic anisotropy of thermal transport in bulk CrOCl. The insight gained in this work sheds light on the design of advanced thermal functional materials.
format Preprint
id arxiv_https___arxiv_org_abs_2412_18461
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Asymmetric electron distribution induced intrinsically strong anisotropy of thermal transport in bulk CrOCl
Tian, Qikun
Yang, Qi
Huang, An
Peng, Bo
Zhang, Jinbo
Zheng, Xiong
Zhou, Jian
Qin, Zhenzhen
Qin, Guangzhao
Applied Physics
Anisotropic heat transfer offers promising solutions to the efficient heat dissipation in the realm of electronic device thermal management. However, the fundamental origin of the anisotropy of thermal transport remains mysterious. In this paper, by combining frequency domain thermoreflectance (FDTR) technique and first-principles-based multiscale simulations, we report the intrinsic anisotropy of thermal transport in bulk CrOCl, and further trace the origin of the anisotropy back to the fundamental electronic structures. The in-plane and cross-plane thermal conductivities ($κ$) at 300 K are found to be 21.6 and 2.18 Wm$^{-1}$K$^{-1}$, respectively, showcasing a strong $κ_\mathrm{in-plane}/κ_\mathrm{cross-plane}$ ratio of $\sim$10. Deep analysis of orbital-resolved electronic structures reveals that electrons are mainly distributed along the in-plane direction with limited interlayer distribution along the cross-plane direction, fundamentally leading to the intrinsic anisotropy of thermal transport in bulk CrOCl. The insight gained in this work sheds light on the design of advanced thermal functional materials.
title Asymmetric electron distribution induced intrinsically strong anisotropy of thermal transport in bulk CrOCl
topic Applied Physics
url https://arxiv.org/abs/2412.18461