Seed-Driven Stepwise Crystallization (SDSC) for Growing Rutile GeO2 Films via MOCVD
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866908402895028224 |
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| author | Rahaman, Imteaz Li, Botong Duersch, Bobby Ellis, Hunter D. Fu, Kai |
| author_facet | Rahaman, Imteaz Li, Botong Duersch, Bobby Ellis, Hunter D. Fu, Kai |
| contents | Germanium dioxide (r-GeO2) is an emerging new ultrawide bandgap (UWBG) semiconductor with significant potential for power electronics, thanks to its large-size substrate compatibility and ambipolar doping capability. However, phase segregation during metal-organic chemical vapor deposition (MOCVD) on substrates like r-TiO2 has posed a significant barrier to achieving high-quality films. Conventional optimization of growth parameters has been found so far not very insufficient in film coverage and film quality. To address this, a seed-driven stepwise crystallization (SDSC) growth approach was employed in this study, featuring multiple sequential deposition steps on a pre-templated substrate enriched with r-GeO2 seeds. The process began with an initial 180-minute deposition to establish r-GeO2 nucleation seeds, followed by a sequence of shorter deposition steps (90, 60, 60, 60, 60, and 60 minutes). This stepwise growth strategy progressively increased the crystalline coverage to 57.4%, 77.49%, 79.73%, 93.27%, 99.17%, and ultimately 100%. Concurrently, the crystalline quality improved substantially, evidenced by a ~30% reduction in the Full Width at Half Maximum (FWHM) of X-ray diffraction rocking curves. These findings demonstrate the potential of the SDSC approach for overcoming phase segregation and achieving high-quality, large-area r-GeO2 films. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2412_19429 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Seed-Driven Stepwise Crystallization (SDSC) for Growing Rutile GeO2 Films via MOCVD Rahaman, Imteaz Li, Botong Duersch, Bobby Ellis, Hunter D. Fu, Kai Materials Science Germanium dioxide (r-GeO2) is an emerging new ultrawide bandgap (UWBG) semiconductor with significant potential for power electronics, thanks to its large-size substrate compatibility and ambipolar doping capability. However, phase segregation during metal-organic chemical vapor deposition (MOCVD) on substrates like r-TiO2 has posed a significant barrier to achieving high-quality films. Conventional optimization of growth parameters has been found so far not very insufficient in film coverage and film quality. To address this, a seed-driven stepwise crystallization (SDSC) growth approach was employed in this study, featuring multiple sequential deposition steps on a pre-templated substrate enriched with r-GeO2 seeds. The process began with an initial 180-minute deposition to establish r-GeO2 nucleation seeds, followed by a sequence of shorter deposition steps (90, 60, 60, 60, 60, and 60 minutes). This stepwise growth strategy progressively increased the crystalline coverage to 57.4%, 77.49%, 79.73%, 93.27%, 99.17%, and ultimately 100%. Concurrently, the crystalline quality improved substantially, evidenced by a ~30% reduction in the Full Width at Half Maximum (FWHM) of X-ray diffraction rocking curves. These findings demonstrate the potential of the SDSC approach for overcoming phase segregation and achieving high-quality, large-area r-GeO2 films. |
| title | Seed-Driven Stepwise Crystallization (SDSC) for Growing Rutile GeO2 Films via MOCVD |
| topic | Materials Science |
| url | https://arxiv.org/abs/2412.19429 |