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Main Author: Aryal, Ganesh
Format: Preprint
Published: 2024
Subjects:
Online Access:https://arxiv.org/abs/2412.19857
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_version_ 1866915086629601280
author Aryal, Ganesh
author_facet Aryal, Ganesh
contents Molecular beam epitaxy (MBE) is an epitaxy method for thin film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of the nanotechnologies. We have used Kinetic Monte Carlo (KMC) simulation technique to study the crystal growth during Molecular Beam Epitaxy (MBE). KMC is used to simulate the physical phenomena in which the probable events are selected by using pseudo random numbers. In this work, we have studied the effect of strain at various fixed coverage values, with the model which includes varying strain-driven detachment on average island morphology, average island density, relative width distribution and island size distributions. Our simulation results demonstrate that growth on a patterned impurity surface with inclusion of varying strain-driven detachment resulted in improvement the spatial ordering on island morphologies and the size distribution of the islands.
format Preprint
id arxiv_https___arxiv_org_abs_2412_19857
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Effect of size dependent strain at various coverage on island formation: Kinetic Monte Carlo study
Aryal, Ganesh
Materials Science
Molecular beam epitaxy (MBE) is an epitaxy method for thin film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of the nanotechnologies. We have used Kinetic Monte Carlo (KMC) simulation technique to study the crystal growth during Molecular Beam Epitaxy (MBE). KMC is used to simulate the physical phenomena in which the probable events are selected by using pseudo random numbers. In this work, we have studied the effect of strain at various fixed coverage values, with the model which includes varying strain-driven detachment on average island morphology, average island density, relative width distribution and island size distributions. Our simulation results demonstrate that growth on a patterned impurity surface with inclusion of varying strain-driven detachment resulted in improvement the spatial ordering on island morphologies and the size distribution of the islands.
title Effect of size dependent strain at various coverage on island formation: Kinetic Monte Carlo study
topic Materials Science
url https://arxiv.org/abs/2412.19857