An ab-initio study on engineering quantum anomalous Hall effect in compensated antiferromagnet MnBi$_{2}$Te$_{4}$

Fuente: arXiv
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Autori principali: Li, Zeyu, Han, Yulei, Qiao, Zhenhua
Natura: Preprint
Pubblicazione: 2024
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author Li, Zeyu
Han, Yulei
Qiao, Zhenhua
author_facet Li, Zeyu
Han, Yulei
Qiao, Zhenhua
contents Recently, the quantum anomalous Hall effect (QAHE) has been theoretically proposed in compensated antiferromagnetic systems by using the magnetic topological insulator model [see arXiv:2404.13305 (2024)]. However, the related and systematic study based on a realistic material system is still limited. As the only experimentally realized antiferromagnetic topological insulator, MnBi$_{2}$Te$_{4}$ becomes a vital platform for exploring various topological states. In this work, by using the comprehensive first-principles calculations, we demonstrate that the QAHE can also be realized in compensated antiferromagnetic even-septuple-layer MnBi$_{2}$Te$_{4}$ without combined parity-time ($\mathcal{PT}$) symmetry. Using a magnetic topological insulator model, the layer-resolved Chern number is calculated to further understand the physical origin of different Chern numbers. The application of external hydrostatic pressure can strengthen the Te-Te quasicovalent bond due to the dramatic compression of the van der Waals gap. Thus, the resulting topological nontrivial gap can exceed the room-temperature energy scale in a wide range of pressures. Additionally, we find that constructing MnBi$_{2}$Te$_{4}$/CrI$_{3}$ heterostructure can realize the compensated antiferromagnetic configurations with QAHE. Our findings illustrate the realization of QAHE in compensated antiferromagnetic even-septuple-layer MnBi$_{2}$Te$_{4}$ and provide a reliable strategy to obtain the corresponding magnetic configurations.
format Preprint
id arxiv_https___arxiv_org_abs_2412_20136
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle An ab-initio study on engineering quantum anomalous Hall effect in compensated antiferromagnet MnBi$_{2}$Te$_{4}$
Li, Zeyu
Han, Yulei
Qiao, Zhenhua
Materials Science
Mesoscale and Nanoscale Physics
Recently, the quantum anomalous Hall effect (QAHE) has been theoretically proposed in compensated antiferromagnetic systems by using the magnetic topological insulator model [see arXiv:2404.13305 (2024)]. However, the related and systematic study based on a realistic material system is still limited. As the only experimentally realized antiferromagnetic topological insulator, MnBi$_{2}$Te$_{4}$ becomes a vital platform for exploring various topological states. In this work, by using the comprehensive first-principles calculations, we demonstrate that the QAHE can also be realized in compensated antiferromagnetic even-septuple-layer MnBi$_{2}$Te$_{4}$ without combined parity-time ($\mathcal{PT}$) symmetry. Using a magnetic topological insulator model, the layer-resolved Chern number is calculated to further understand the physical origin of different Chern numbers. The application of external hydrostatic pressure can strengthen the Te-Te quasicovalent bond due to the dramatic compression of the van der Waals gap. Thus, the resulting topological nontrivial gap can exceed the room-temperature energy scale in a wide range of pressures. Additionally, we find that constructing MnBi$_{2}$Te$_{4}$/CrI$_{3}$ heterostructure can realize the compensated antiferromagnetic configurations with QAHE. Our findings illustrate the realization of QAHE in compensated antiferromagnetic even-septuple-layer MnBi$_{2}$Te$_{4}$ and provide a reliable strategy to obtain the corresponding magnetic configurations.
title An ab-initio study on engineering quantum anomalous Hall effect in compensated antiferromagnet MnBi$_{2}$Te$_{4}$
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2412.20136