Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder
Fuente:
arXiv
Saved in:
| Main Authors: | Thayil, Abel, Ermoneit, Lasse, Kantner, Markus |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Exact Multi-Valley Envelope Function Theory of Valley Splitting in Si/SiGe Nanostructures
by: Ermoneit, Lasse, et al.
Published: (2026)
by: Ermoneit, Lasse, et al.
Published: (2026)
Optimization of Si/SiGe Heterostructures for Large and Robust Valley Splitting in Silicon Qubits
by: Thayil, Abel, et al.
Published: (2025)
by: Thayil, Abel, et al.
Published: (2025)
Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
by: Daoust, P., et al.
Published: (2025)
by: Daoust, P., et al.
Published: (2025)
Heavy Hole vs. Light Hole Spin Qubits: A Strain-Driven Study of SiGe/Ge and GeSn/Ge
by: Dsouza, Kelvin, et al.
Published: (2024)
by: Dsouza, Kelvin, et al.
Published: (2024)
Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
by: Fattal, I., et al.
Published: (2025)
by: Fattal, I., et al.
Published: (2025)
Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
by: Losert, Merritt P., et al.
Published: (2023)
by: Losert, Merritt P., et al.
Published: (2023)
High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits
by: Kong, Zhenzhen, et al.
Published: (2024)
by: Kong, Zhenzhen, et al.
Published: (2024)
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
by: Mistroni, Alberto, et al.
Published: (2025)
by: Mistroni, Alberto, et al.
Published: (2025)
Electrical Characterization of hexagonal SiGe
by: Bollier, Isabelle, et al.
Published: (2025)
by: Bollier, Isabelle, et al.
Published: (2025)
Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
by: Cakar, Efe, et al.
Published: (2024)
by: Cakar, Efe, et al.
Published: (2024)
Statistical Structure of Charge Disorder in Si/SiGe Quantum Dots
by: Samadi, Saeed, et al.
Published: (2025)
by: Samadi, Saeed, et al.
Published: (2025)
Phonon-Induced Exchange Gate Infidelities in Semiconducting Si-SiGe Spin Qubits
by: Brooks, Matthew, et al.
Published: (2024)
by: Brooks, Matthew, et al.
Published: (2024)
Reducing disorder in Ge quantum wells by using thick SiGe barriers
by: Costa, Davide, et al.
Published: (2024)
by: Costa, Davide, et al.
Published: (2024)
Refining Au/Sb alloyed ohmic contacts in undoped Si/SiGe strained quantum wells
by: Kynshi, LuckyDonald L, et al.
Published: (2025)
by: Kynshi, LuckyDonald L, et al.
Published: (2025)
Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
by: Struck, Tom, et al.
Published: (2023)
by: Struck, Tom, et al.
Published: (2023)
High-fidelity EDSR in Si/SiGe Wiggle Wells
by: Soomro, Hudaiba, et al.
Published: (2026)
by: Soomro, Hudaiba, et al.
Published: (2026)
On-chip cryogenic multiplexing of Si/SiGe quantum devices
by: Wolfe, M. A., et al.
Published: (2024)
by: Wolfe, M. A., et al.
Published: (2024)
Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions
by: Imakire, K., et al.
Published: (2024)
by: Imakire, K., et al.
Published: (2024)
Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
by: Stehouwer, Lucas E. A., et al.
Published: (2025)
by: Stehouwer, Lucas E. A., et al.
Published: (2025)
Characterization of individual charge fluctuators in Si/SiGe quantum dots
by: Ye, Feiyang, et al.
Published: (2024)
by: Ye, Feiyang, et al.
Published: (2024)
Anisotropic spin-valley coupling in SiMOS and Si/SiGe quantum dots
by: Jacobson, N. Tobias, et al.
Published: (2026)
by: Jacobson, N. Tobias, et al.
Published: (2026)
g-tensor Optimization in Ge/SiGe Quantum Dots
by: Shojaei, Aram, et al.
Published: (2026)
by: Shojaei, Aram, et al.
Published: (2026)
Active Noise Reduction in Si/SiGe Gated Quantum Dots
by: Bharadwaj, Rajat, et al.
Published: (2025)
by: Bharadwaj, Rajat, et al.
Published: (2025)
Numerical simulation of coherent spin-shuttling in a QuBus with charged defects
by: Ciroth, Nils, et al.
Published: (2025)
by: Ciroth, Nils, et al.
Published: (2025)
Strain-Enhanced Hydrogen Evolution, Electrical, Optical, and Thermoelectric Properties of the Multifunctional 2D CrSi2N4 Monolayer
by: Ahmad, Rao Uzair, et al.
Published: (2026)
by: Ahmad, Rao Uzair, et al.
Published: (2026)
Conveyor-mode electron shuttling through a T-junction in Si/SiGe
by: Beer, Max, et al.
Published: (2026)
by: Beer, Max, et al.
Published: (2026)
Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
by: Németh, Róbert, et al.
Published: (2024)
by: Németh, Róbert, et al.
Published: (2024)
Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
by: Ye, Feiyang, et al.
Published: (2024)
by: Ye, Feiyang, et al.
Published: (2024)
Investigation of filamentation in a-Si/Ag/Cu memristors with atomic force microscope
by: Samsonova, Alena, et al.
Published: (2026)
by: Samsonova, Alena, et al.
Published: (2026)
Two-Qubit Module Based on Phonon-Coupled Ge Hole-Spin Qubits: Design, Fabrication, and Readout at 1-4 K
by: Mei, D. -M., et al.
Published: (2026)
by: Mei, D. -M., et al.
Published: (2026)
Quantum confinement in semiconductor random alloys: a case study on Si/SiGe/Si
by: Dick, Daniel, et al.
Published: (2026)
by: Dick, Daniel, et al.
Published: (2026)
Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles
by: Cvitkovich, Lukas, et al.
Published: (2026)
by: Cvitkovich, Lukas, et al.
Published: (2026)
Control of threshold voltages in Si/SiGe quantum devices via optical illumination
by: Wolfe, M. A., et al.
Published: (2023)
by: Wolfe, M. A., et al.
Published: (2023)
Tunable Valley Polarization in Diamond
by: Suntornwipat, Nattakarn, et al.
Published: (2026)
by: Suntornwipat, Nattakarn, et al.
Published: (2026)
The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
by: Losert, Merritt P. R., et al.
Published: (2025)
by: Losert, Merritt P. R., et al.
Published: (2025)
Optically programmable and erasable cryogenic flash memory on an undoped Si/SiGe heterostructure
by: Rastogi, S, et al.
Published: (2026)
by: Rastogi, S, et al.
Published: (2026)
Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
by: Marcogliese, Lucas, et al.
Published: (2025)
by: Marcogliese, Lucas, et al.
Published: (2025)
Cryogenic Optical-to-Microwave Conversion Using Si Photonic Integrated Circuit Ge Photodiodes
by: Julien-Neitzert, D., et al.
Published: (2024)
by: Julien-Neitzert, D., et al.
Published: (2024)
Multi-level charge fluctuations in a Si/SiGe double quantum dot device
by: Albrecht, Dylan, et al.
Published: (2026)
by: Albrecht, Dylan, et al.
Published: (2026)
Smooth velocity shuttling for suppressing valley excitations in disordered Si/SiGe quantum dots
by: Nagai, Ryo, et al.
Published: (2026)
by: Nagai, Ryo, et al.
Published: (2026)
Similar Items
-
Exact Multi-Valley Envelope Function Theory of Valley Splitting in Si/SiGe Nanostructures
by: Ermoneit, Lasse, et al.
Published: (2026) -
Optimization of Si/SiGe Heterostructures for Large and Robust Valley Splitting in Silicon Qubits
by: Thayil, Abel, et al.
Published: (2025) -
Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
by: Daoust, P., et al.
Published: (2025) -
Heavy Hole vs. Light Hole Spin Qubits: A Strain-Driven Study of SiGe/Ge and GeSn/Ge
by: Dsouza, Kelvin, et al.
Published: (2024) -
Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
by: Fattal, I., et al.
Published: (2025)