Defect-mediated electron-phonon coupling in halide double perovskite

Fuente: arXiv
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Hauptverfasser: Joshi, Aprajita, Saikia, Sajid, Badola, Shalini, Nag, Angshuman, Saha, Surajit
Format: Preprint
Veröffentlicht: 2024
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author Joshi, Aprajita
Saikia, Sajid
Badola, Shalini
Nag, Angshuman
Saha, Surajit
author_facet Joshi, Aprajita
Saikia, Sajid
Badola, Shalini
Nag, Angshuman
Saha, Surajit
contents Optically active defects often play a crucial role in governing the light emission as well as the electronic properties of materials. Moreover, defect-mediated states in the mid-gap region can trap electrons, thus opening a path for the recombination of electrons and holes in lower energy states that may require phonons in the process. Considering this, we have probed electron-phonon interaction in halide perovskite systems with the introduction of defects and investigated the thermal effect on this interaction. Here, we report Raman spectroscopy study of the thermal evolution of electron-phonon coupling, which is tunable with the crystal growth conditions, in the halide perovskite systems Cs2AgInCl6 and Cs2NaInCl6. The signature of electron-phonon coupling is observed as a Fano anomaly in the lowest frequency phonon mode (51 cm-1) which evolves with temperature. In addition, we observe a broad band in the photoluminescence (PL) measurements for the defect-mediated systems, which is otherwise absent in defect-free halide perovskite. The simultaneous observation of the Fano anomaly in the Raman spectrum and the emergence of the PL band suggests the defect-mediated mid-gap states and the consequent existence of electron-phonon coupling in the double perovskite.
format Preprint
id arxiv_https___arxiv_org_abs_2501_00423
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Defect-mediated electron-phonon coupling in halide double perovskite
Joshi, Aprajita
Saikia, Sajid
Badola, Shalini
Nag, Angshuman
Saha, Surajit
Materials Science
Optically active defects often play a crucial role in governing the light emission as well as the electronic properties of materials. Moreover, defect-mediated states in the mid-gap region can trap electrons, thus opening a path for the recombination of electrons and holes in lower energy states that may require phonons in the process. Considering this, we have probed electron-phonon interaction in halide perovskite systems with the introduction of defects and investigated the thermal effect on this interaction. Here, we report Raman spectroscopy study of the thermal evolution of electron-phonon coupling, which is tunable with the crystal growth conditions, in the halide perovskite systems Cs2AgInCl6 and Cs2NaInCl6. The signature of electron-phonon coupling is observed as a Fano anomaly in the lowest frequency phonon mode (51 cm-1) which evolves with temperature. In addition, we observe a broad band in the photoluminescence (PL) measurements for the defect-mediated systems, which is otherwise absent in defect-free halide perovskite. The simultaneous observation of the Fano anomaly in the Raman spectrum and the emergence of the PL band suggests the defect-mediated mid-gap states and the consequent existence of electron-phonon coupling in the double perovskite.
title Defect-mediated electron-phonon coupling in halide double perovskite
topic Materials Science
url https://arxiv.org/abs/2501.00423