Giant Nonvolatile Multistate Resistance with Fully Magnetically Controlled van der Waals Multiferroic Tunnel Junctions
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866918024882159616 |
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| author | Yan, Zhi Zhang, Xujin Xiao, Jianhua Fang, Cheng Xu, Xiaohong |
| author_facet | Yan, Zhi Zhang, Xujin Xiao, Jianhua Fang, Cheng Xu, Xiaohong |
| contents | Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically controlled vdW-MFTJ based on a \(\mathrm{CrBr_3/MnPSe_3/CrBr_3}\) vertical heterostructure, which achieves ferroelectric polarization reversal without relying on atomic migration driven by inversion symmetry breaking. Using first-principles calculations, we investigate the spin-polarized quantum transport properties of the proposed structure. By integrating asymmetric PtTe$_2$/alkali-metal (Li/Na/K)-doped/intercalated CrBr$_3$ electrodes, the device demonstrates exceptional performance, with a maximum tunneling magnetoresistance (TMR) exceeding $8.1\times10^5$\% and tunneling electroresistance (TER) reaching 2499\%, while the spin-filtering channels can be flexibly controlled by the magnetization direction of the magnetic free layer, achieving perfect spin-filtering over a broad bias voltage range. Applying an external bias voltage further enhances these metrics, increasing TMR to $3.6\times 10^7$\% and TER to 9990\%. Notably, a pronounced negative differential resistance (NDR) effect is observed, yielding an unprecedented peak-to-valley ratio (PVR) of $9.55\times10^9$\%, representing the highest value reported for vertical tunnel junctions. These extraordinary characteristics highlight the potential of vdW-MFTJs for ultra-efficient electronic switching, a key feature for next-generation spintronic devices. Our findings provide a solid theoretical foundation for designing and developing high-performance magnetic storage and logic technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_00761 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Giant Nonvolatile Multistate Resistance with Fully Magnetically Controlled van der Waals Multiferroic Tunnel Junctions Yan, Zhi Zhang, Xujin Xiao, Jianhua Fang, Cheng Xu, Xiaohong Materials Science Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically controlled vdW-MFTJ based on a \(\mathrm{CrBr_3/MnPSe_3/CrBr_3}\) vertical heterostructure, which achieves ferroelectric polarization reversal without relying on atomic migration driven by inversion symmetry breaking. Using first-principles calculations, we investigate the spin-polarized quantum transport properties of the proposed structure. By integrating asymmetric PtTe$_2$/alkali-metal (Li/Na/K)-doped/intercalated CrBr$_3$ electrodes, the device demonstrates exceptional performance, with a maximum tunneling magnetoresistance (TMR) exceeding $8.1\times10^5$\% and tunneling electroresistance (TER) reaching 2499\%, while the spin-filtering channels can be flexibly controlled by the magnetization direction of the magnetic free layer, achieving perfect spin-filtering over a broad bias voltage range. Applying an external bias voltage further enhances these metrics, increasing TMR to $3.6\times 10^7$\% and TER to 9990\%. Notably, a pronounced negative differential resistance (NDR) effect is observed, yielding an unprecedented peak-to-valley ratio (PVR) of $9.55\times10^9$\%, representing the highest value reported for vertical tunnel junctions. These extraordinary characteristics highlight the potential of vdW-MFTJs for ultra-efficient electronic switching, a key feature for next-generation spintronic devices. Our findings provide a solid theoretical foundation for designing and developing high-performance magnetic storage and logic technologies. |
| title | Giant Nonvolatile Multistate Resistance with Fully Magnetically Controlled van der Waals Multiferroic Tunnel Junctions |
| topic | Materials Science |
| url | https://arxiv.org/abs/2501.00761 |