TReCiM: Lower Power and Temperature-Resilient Multibit 2FeFET-1T Compute-in-Memory Design
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2025
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| author | Zhou, Yifei Kämpfe, Thomas Ni, Kai Amrouch, Hussam Zhuo, Cheng Yin, Xunzhao |
| author_facet | Zhou, Yifei Kämpfe, Thomas Ni, Kai Amrouch, Hussam Zhuo, Cheng Yin, Xunzhao |
| contents | Compute-in-memory (CiM) emerges as a promising solution to solve hardware challenges in artificial intelligence (AI) and the Internet of Things (IoT), particularly addressing the "memory wall" issue. By utilizing nonvolatile memory (NVM) devices in a crossbar structure, CiM efficiently accelerates multiply-accumulate (MAC) computations, the crucial operations in neural networks and other AI models. Among various NVM devices, Ferroelectric FET (FeFET) is particularly appealing for ultra-low-power CiM arrays due to its CMOS compatibility, voltage-driven write/read mechanisms and high ION/IOFF ratio. Moreover, subthreshold-operated FeFETs, which operate at scaling voltages in the subthreshold region, can further minimize the power consumption of CiM array. However, subthreshold-FeFETs are susceptible to temperature drift, resulting in computation accuracy degradation. Existing solutions exhibit weak temperature resilience at larger array size and only support 1-bit. In this paper, we propose TReCiM, an ultra-low-power temperature-resilient multibit 2FeFET-1T CiM design that reliably performs MAC operations in the subthreshold-FeFET region with temperature ranging from 0 to 85 degrees Celcius at scale. We benchmark our design using NeuroSim framework in the context of VGG-8 neural network architecture running the CIFAR-10 dataset. Benchmarking results suggest that when considering temperature drift impact, our proposed TReCiM array achieves 91.31% accuracy, with 1.86% accuracy improvement compared to existing 1-bit 2T-1FeFET CiM array. Furthermore, our proposed design achieves 48.03 TOPS/W energy efficiency at system level, comparable to existing designs with smaller technology feature sizes. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_01052 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | TReCiM: Lower Power and Temperature-Resilient Multibit 2FeFET-1T Compute-in-Memory Design Zhou, Yifei Kämpfe, Thomas Ni, Kai Amrouch, Hussam Zhuo, Cheng Yin, Xunzhao Emerging Technologies Compute-in-memory (CiM) emerges as a promising solution to solve hardware challenges in artificial intelligence (AI) and the Internet of Things (IoT), particularly addressing the "memory wall" issue. By utilizing nonvolatile memory (NVM) devices in a crossbar structure, CiM efficiently accelerates multiply-accumulate (MAC) computations, the crucial operations in neural networks and other AI models. Among various NVM devices, Ferroelectric FET (FeFET) is particularly appealing for ultra-low-power CiM arrays due to its CMOS compatibility, voltage-driven write/read mechanisms and high ION/IOFF ratio. Moreover, subthreshold-operated FeFETs, which operate at scaling voltages in the subthreshold region, can further minimize the power consumption of CiM array. However, subthreshold-FeFETs are susceptible to temperature drift, resulting in computation accuracy degradation. Existing solutions exhibit weak temperature resilience at larger array size and only support 1-bit. In this paper, we propose TReCiM, an ultra-low-power temperature-resilient multibit 2FeFET-1T CiM design that reliably performs MAC operations in the subthreshold-FeFET region with temperature ranging from 0 to 85 degrees Celcius at scale. We benchmark our design using NeuroSim framework in the context of VGG-8 neural network architecture running the CIFAR-10 dataset. Benchmarking results suggest that when considering temperature drift impact, our proposed TReCiM array achieves 91.31% accuracy, with 1.86% accuracy improvement compared to existing 1-bit 2T-1FeFET CiM array. Furthermore, our proposed design achieves 48.03 TOPS/W energy efficiency at system level, comparable to existing designs with smaller technology feature sizes. |
| title | TReCiM: Lower Power and Temperature-Resilient Multibit 2FeFET-1T Compute-in-Memory Design |
| topic | Emerging Technologies |
| url | https://arxiv.org/abs/2501.01052 |