Reconfigurable Filamentary Conduction in Thermally Stable Zeolitic Imidazolate Framework (ZIF-8) Resistive Switching Devices
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arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866917883302379520 |
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| author | Kaushik, Divya Kumar, Nitin Sharma, Harshit Prajapat, Pukhraj V., Mehamalini Sambandamurthy, G. Srivastava, Ritu |
| author_facet | Kaushik, Divya Kumar, Nitin Sharma, Harshit Prajapat, Pukhraj V., Mehamalini Sambandamurthy, G. Srivastava, Ritu |
| contents | The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic and inorganic materials each offer distinct advantages for resistive switching (RS) performance, while hybrid materials like metal-organic frameworks (MOFs) combine the strengths of both. In this study, we present a resistive random-access memory (ReRAM) device utilizing zeolitic imidazolate framework (ZIF-8), a MOF material, as the resistive switching layer. The ZIF-8 film was synthesized via a simple solution process method at room temperature and subsequently characterized. The Al/ZIF-8/ITO device demonstrates bipolar resistive switching behaviour with an on/off resistance ratio of 100, stable retention up to 10000 seconds, and consistent performance across 60 cycles while exhibiting robust thermal stability from -20 C to 100 C. Low-frequency noise and impedance spectroscopy measurements suggest a filamentary switching mechanism. Additionally, the memory state can be tuned by adjusting the reset voltage, pointing to potential as multi-level memory. Potentiation and depression experiments further highlight the devices promise for neuromorphic applications. With high stability, tunability, and strong performance, the ZIF-8 based ReRAM shows great promise for advanced NVM and neuromorphic computing applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_01822 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Reconfigurable Filamentary Conduction in Thermally Stable Zeolitic Imidazolate Framework (ZIF-8) Resistive Switching Devices Kaushik, Divya Kumar, Nitin Sharma, Harshit Prajapat, Pukhraj V., Mehamalini Sambandamurthy, G. Srivastava, Ritu Materials Science Mesoscale and Nanoscale Physics The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic and inorganic materials each offer distinct advantages for resistive switching (RS) performance, while hybrid materials like metal-organic frameworks (MOFs) combine the strengths of both. In this study, we present a resistive random-access memory (ReRAM) device utilizing zeolitic imidazolate framework (ZIF-8), a MOF material, as the resistive switching layer. The ZIF-8 film was synthesized via a simple solution process method at room temperature and subsequently characterized. The Al/ZIF-8/ITO device demonstrates bipolar resistive switching behaviour with an on/off resistance ratio of 100, stable retention up to 10000 seconds, and consistent performance across 60 cycles while exhibiting robust thermal stability from -20 C to 100 C. Low-frequency noise and impedance spectroscopy measurements suggest a filamentary switching mechanism. Additionally, the memory state can be tuned by adjusting the reset voltage, pointing to potential as multi-level memory. Potentiation and depression experiments further highlight the devices promise for neuromorphic applications. With high stability, tunability, and strong performance, the ZIF-8 based ReRAM shows great promise for advanced NVM and neuromorphic computing applications. |
| title | Reconfigurable Filamentary Conduction in Thermally Stable Zeolitic Imidazolate Framework (ZIF-8) Resistive Switching Devices |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2501.01822 |