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Monolayer control of spin-charge conversion in van der Waals heterostructures

Fuente: arXiv

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Dettagli Bibliografici
Autori principali:	Abdukayumov, K., Paull, O., Mičica, M., Ibrahim, F., Vojáček, L., Wright, A., Massabeau, S., Mazzola, F., Polewczyk, V., Jego, C., Sharma, R., Vergnaud, C., Marty, A., de Moraes, I. Gomes, Ouerghi, A., Okuno, H., Jana, A., Kar, I., Fuji, J., Vobornik, I., Li, J., Bonell, F., Chshiev, M., Bibes, M., George, J. -M., Jaffrès, H., Dhillon, S., Jamet, M.
Natura:	Preprint
Pubblicazione:	2025
Soggetti:	Materials Science Mesoscale and Nanoscale Physics
Accesso online:	Acceder al recurso
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author	Abdukayumov, K. Paull, O. Mičica, M. Ibrahim, F. Vojáček, L. Wright, A. Massabeau, S. Mazzola, F. Polewczyk, V. Jego, C. Sharma, R. Vergnaud, C. Marty, A. de Moraes, I. Gomes Ouerghi, A. Okuno, H. Jana, A. Kar, I. Fuji, J. Vobornik, I. Li, J. Bonell, F. Chshiev, M. Bibes, M. George, J. -M. Jaffrès, H. Dhillon, S. Jamet, M.
author_facet	Abdukayumov, K. Paull, O. Mičica, M. Ibrahim, F. Vojáček, L. Wright, A. Massabeau, S. Mazzola, F. Polewczyk, V. Jego, C. Sharma, R. Vergnaud, C. Marty, A. de Moraes, I. Gomes Ouerghi, A. Okuno, H. Jana, A. Kar, I. Fuji, J. Vobornik, I. Li, J. Bonell, F. Chshiev, M. Bibes, M. George, J. -M. Jaffrès, H. Dhillon, S. Jamet, M.
contents	The diversity of 2D materials and their van der Waals (vdW) stacking presents a fertile ground for engineering novel multifunctional materials and quantum states of matter. This permits unique opportunities to tailor the electronic properties of vdW heterostructures by the insertion of only a single 2D material layer. However, such vdW materials engineering at the atomic scale has yet to be investigated for spin-charge interconversion phenomena. Here, we report on the control of these effects at the monolayer level, where drastic increase in intensity and change in sign of THz spintronic emission are demonstrated by inserting a single layer of MoSe$_2$ between PtSe$_2$ and graphene in a fully epitaxial, large area stacked structure. By using a combination of spin and angle resolved photoemission and density functional theory to reveal the electronic and spin structures, we illustrate two different mechanisms relying on charge transfer and electronic hybridization for the formation of Rashba states, which are responsible for spin-charge conversion and hence the THz spintronic emission. These findings open new pathways to design, at the atomic scale, efficient THz spintronic emitters made of 2D materials and other spintronic devices based on spin-charge interconversion phenomena.
format	Preprint
id	arxiv_https___arxiv_org_abs_2501_02337
institution	arXiv
publishDate	2025
record_format	arxiv
spellingShingle	Monolayer control of spin-charge conversion in van der Waals heterostructures Abdukayumov, K. Paull, O. Mičica, M. Ibrahim, F. Vojáček, L. Wright, A. Massabeau, S. Mazzola, F. Polewczyk, V. Jego, C. Sharma, R. Vergnaud, C. Marty, A. de Moraes, I. Gomes Ouerghi, A. Okuno, H. Jana, A. Kar, I. Fuji, J. Vobornik, I. Li, J. Bonell, F. Chshiev, M. Bibes, M. George, J. -M. Jaffrès, H. Dhillon, S. Jamet, M. Materials Science Mesoscale and Nanoscale Physics The diversity of 2D materials and their van der Waals (vdW) stacking presents a fertile ground for engineering novel multifunctional materials and quantum states of matter. This permits unique opportunities to tailor the electronic properties of vdW heterostructures by the insertion of only a single 2D material layer. However, such vdW materials engineering at the atomic scale has yet to be investigated for spin-charge interconversion phenomena. Here, we report on the control of these effects at the monolayer level, where drastic increase in intensity and change in sign of THz spintronic emission are demonstrated by inserting a single layer of MoSe$_2$ between PtSe$_2$ and graphene in a fully epitaxial, large area stacked structure. By using a combination of spin and angle resolved photoemission and density functional theory to reveal the electronic and spin structures, we illustrate two different mechanisms relying on charge transfer and electronic hybridization for the formation of Rashba states, which are responsible for spin-charge conversion and hence the THz spintronic emission. These findings open new pathways to design, at the atomic scale, efficient THz spintronic emitters made of 2D materials and other spintronic devices based on spin-charge interconversion phenomena.
title	Monolayer control of spin-charge conversion in van der Waals heterostructures
topic	Materials Science Mesoscale and Nanoscale Physics
url	https://arxiv.org/abs/2501.02337