Photo-luminescence properties of ion implanted Er3+-defects in 4H-SiCOI towards integrated quantum photonics
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arXiv
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| Auteurs principaux: | , , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866908622829649920 |
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| author | Bader, Joshua Lim, Shao Qi Inam, Faraz Ahmed Johnson, Brett C. Peruzzo, Alberto McCallum, Jeffrey Li, Qing Castelletto, Stefania |
| author_facet | Bader, Joshua Lim, Shao Qi Inam, Faraz Ahmed Johnson, Brett C. Peruzzo, Alberto McCallum, Jeffrey Li, Qing Castelletto, Stefania |
| contents | Colour centres hosted in solid-state materials such as silicon carbide and diamond are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these colour centres within photonic integrated circuits may enable precise control over their inherent photo-physical properties through strong light-matter interaction. Here, we investigate ion-implanted erbium ($\text{Er}^{3+}$) defects embedded in thin-film 4H-silicon-carbide-on-insulator (4H-SiCOI). Optimized implantation conditions and thermal annealing processes designed to enhance the emission characteristics of the $\text{Er}^{3+}$-defect are reported. By examining key properties such as photoluminescence intensity, optical lifetime, and polarization, we present an analysis of ensemble $\text{Er}^{3+}$-defects within 4H-SiCOI, providing insights into their potential for future quantum applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_02755 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Photo-luminescence properties of ion implanted Er3+-defects in 4H-SiCOI towards integrated quantum photonics Bader, Joshua Lim, Shao Qi Inam, Faraz Ahmed Johnson, Brett C. Peruzzo, Alberto McCallum, Jeffrey Li, Qing Castelletto, Stefania Optics Materials Science Colour centres hosted in solid-state materials such as silicon carbide and diamond are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these colour centres within photonic integrated circuits may enable precise control over their inherent photo-physical properties through strong light-matter interaction. Here, we investigate ion-implanted erbium ($\text{Er}^{3+}$) defects embedded in thin-film 4H-silicon-carbide-on-insulator (4H-SiCOI). Optimized implantation conditions and thermal annealing processes designed to enhance the emission characteristics of the $\text{Er}^{3+}$-defect are reported. By examining key properties such as photoluminescence intensity, optical lifetime, and polarization, we present an analysis of ensemble $\text{Er}^{3+}$-defects within 4H-SiCOI, providing insights into their potential for future quantum applications. |
| title | Photo-luminescence properties of ion implanted Er3+-defects in 4H-SiCOI towards integrated quantum photonics |
| topic | Optics Materials Science |
| url | https://arxiv.org/abs/2501.02755 |