Polarization-induced Quantum Spin Hall Insulator and Topological Devices in InAs Quantum Wells
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arXiv
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| Auteurs principaux: | , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866929660315566080 |
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| author | Liang, Chenhao Zhang, Sheng Sheng, Haohao Wu, Quansheng Weng, Hongming Fang, Zhong Wang, Zhijun |
| author_facet | Liang, Chenhao Zhang, Sheng Sheng, Haohao Wu, Quansheng Weng, Hongming Fang, Zhong Wang, Zhijun |
| contents | In this work, we predict the emergence of a quantum spin Hall insulator (QSHI) in conventional semiconductors, specifically InAs quantum wells, driven by a built-in polarization field. We propose QSHI InAs quantum wells as a platform to engineer topological field effect devices. More precisely, we first present a novel topological logic device that operates without a topological phase transition. Subsequently, we design a high-performance topological transistor due to the presence of edge states. Our approach provides a potential framework for harnessing the unique features of QSHI in device design, paving the way for future topological devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_02801 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Polarization-induced Quantum Spin Hall Insulator and Topological Devices in InAs Quantum Wells Liang, Chenhao Zhang, Sheng Sheng, Haohao Wu, Quansheng Weng, Hongming Fang, Zhong Wang, Zhijun Materials Science Mesoscale and Nanoscale Physics In this work, we predict the emergence of a quantum spin Hall insulator (QSHI) in conventional semiconductors, specifically InAs quantum wells, driven by a built-in polarization field. We propose QSHI InAs quantum wells as a platform to engineer topological field effect devices. More precisely, we first present a novel topological logic device that operates without a topological phase transition. Subsequently, we design a high-performance topological transistor due to the presence of edge states. Our approach provides a potential framework for harnessing the unique features of QSHI in device design, paving the way for future topological devices. |
| title | Polarization-induced Quantum Spin Hall Insulator and Topological Devices in InAs Quantum Wells |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2501.02801 |