Metallisation of the Mott Insulator Ca$_{2}$RuO$_{4}$ using Electric Double-Layer Gating

Fuente: arXiv
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Main Authors: Sakami, Tatsuhiro, Ogura, Hiroki, Ino, Akihiro, Ouchi, Takumi, Nojima, Tsutomu, Nakamura, Fumihiko
Format: Preprint
Published: 2025
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author Sakami, Tatsuhiro
Ogura, Hiroki
Ino, Akihiro
Ouchi, Takumi
Nojima, Tsutomu
Nakamura, Fumihiko
author_facet Sakami, Tatsuhiro
Ogura, Hiroki
Ino, Akihiro
Ouchi, Takumi
Nojima, Tsutomu
Nakamura, Fumihiko
contents To verify whether the Mott insulator Ca2RuO4 can be switched by applying electric-field alone, regardless of current flow, we employ metallisation using electric double-layer gating (EDLG). The resistance change due to EDLG occurs only when positive gate-voltage above +3 V is applied. The amplitude of the reduction, reaching ~97% of the initial value, is difficult to interpret as surface metallisation and is likely related to structural change in bulk.
format Preprint
id arxiv_https___arxiv_org_abs_2501_03591
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Metallisation of the Mott Insulator Ca$_{2}$RuO$_{4}$ using Electric Double-Layer Gating
Sakami, Tatsuhiro
Ogura, Hiroki
Ino, Akihiro
Ouchi, Takumi
Nojima, Tsutomu
Nakamura, Fumihiko
Strongly Correlated Electrons
Materials Science
To verify whether the Mott insulator Ca2RuO4 can be switched by applying electric-field alone, regardless of current flow, we employ metallisation using electric double-layer gating (EDLG). The resistance change due to EDLG occurs only when positive gate-voltage above +3 V is applied. The amplitude of the reduction, reaching ~97% of the initial value, is difficult to interpret as surface metallisation and is likely related to structural change in bulk.
title Metallisation of the Mott Insulator Ca$_{2}$RuO$_{4}$ using Electric Double-Layer Gating
topic Strongly Correlated Electrons
Materials Science
url https://arxiv.org/abs/2501.03591