Field-free perpendicular magnetization switching of low critical current density at room temperature in TaIrTe4/ferromagnet heterostructures
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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866913639063093248 |
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| author | Wei, Lujun Liu, Pai Peng, Jincheng Li, Yanghui Chen, Lina Liu, Ping Li, Feng Niu, Wei Huang, Fei Yang, Jiaju Zhou, Shuang Lu, Yu Liu, Tianyu Chen, Jiarui Wang, Weihao Zhang, Jian Du, Jun Pu, Yong |
| author_facet | Wei, Lujun Liu, Pai Peng, Jincheng Li, Yanghui Chen, Lina Liu, Ping Li, Feng Niu, Wei Huang, Fei Yang, Jiaju Zhou, Shuang Lu, Yu Liu, Tianyu Chen, Jiarui Wang, Weihao Zhang, Jian Du, Jun Pu, Yong |
| contents | Spin-orbit torque-induced perpendicular magnetization switching has attracted much attention due to the advantages of nonvolatility, high density, infinite read/write counts, and low power consumption in spintronic applications. To achieve field-free deterministic switching of perpendicular magnetization, additional magnetic field, magnetic layer assistance, or artificially designed structural symmetry breaking are usually required, which are not conducive to the high-density integration and application of low-power devices. However, 2D Weyl semimetals with low-symmetry structures have recently been found to generate z-spin-polarized currents, which may induce out-of-plane damping-like torques to their neighboring ferromagnetic layers, and realize deterministic perpendicular magnetization switching at zero magnetic field. In this Letter, we report that current-induced field-free magnetization switching at room temperature can be achieved in a perpendicularly magnetized TaIrTe4/Pt/Co/Pt device, and the critical switching current density can be lowered to be about 2.64*105 Acm-2. This study suggests that TaIrTe4 has great potential for the design of room-temperature efficient spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_03712 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Field-free perpendicular magnetization switching of low critical current density at room temperature in TaIrTe4/ferromagnet heterostructures Wei, Lujun Liu, Pai Peng, Jincheng Li, Yanghui Chen, Lina Liu, Ping Li, Feng Niu, Wei Huang, Fei Yang, Jiaju Zhou, Shuang Lu, Yu Liu, Tianyu Chen, Jiarui Wang, Weihao Zhang, Jian Du, Jun Pu, Yong Materials Science Spin-orbit torque-induced perpendicular magnetization switching has attracted much attention due to the advantages of nonvolatility, high density, infinite read/write counts, and low power consumption in spintronic applications. To achieve field-free deterministic switching of perpendicular magnetization, additional magnetic field, magnetic layer assistance, or artificially designed structural symmetry breaking are usually required, which are not conducive to the high-density integration and application of low-power devices. However, 2D Weyl semimetals with low-symmetry structures have recently been found to generate z-spin-polarized currents, which may induce out-of-plane damping-like torques to their neighboring ferromagnetic layers, and realize deterministic perpendicular magnetization switching at zero magnetic field. In this Letter, we report that current-induced field-free magnetization switching at room temperature can be achieved in a perpendicularly magnetized TaIrTe4/Pt/Co/Pt device, and the critical switching current density can be lowered to be about 2.64*105 Acm-2. This study suggests that TaIrTe4 has great potential for the design of room-temperature efficient spintronic devices. |
| title | Field-free perpendicular magnetization switching of low critical current density at room temperature in TaIrTe4/ferromagnet heterostructures |
| topic | Materials Science |
| url | https://arxiv.org/abs/2501.03712 |