Performance of Silicon photomultipliers at low temperatures

Fuente: arXiv
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Hauptverfasser: Hanski, Otto, Kiilerich, Tom, Ahopelto, Sampsa, Semakin, Aleksei, Ahokas, Janne, Dvornichenko, Viacheslav, Vasiliev, Sergey
Format: Preprint
Veröffentlicht: 2025
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author Hanski, Otto
Kiilerich, Tom
Ahopelto, Sampsa
Semakin, Aleksei
Ahokas, Janne
Dvornichenko, Viacheslav
Vasiliev, Sergey
author_facet Hanski, Otto
Kiilerich, Tom
Ahopelto, Sampsa
Semakin, Aleksei
Ahokas, Janne
Dvornichenko, Viacheslav
Vasiliev, Sergey
contents We present experimental results of characterization of Silicon photomultipliers (SiPM) in a temperature range from 90~mK to 40~K. Two SiPMs, one from ONSEMI and one from Hamamatsu Photonics were tested. Operating voltage ranges, dark count rates, afterpulsing effects and photon detection efficiencies (PDE) were determined with illumination by 275 and 470~nm light fed into the cryostat via an optical fiber. A cryogenic shutter provided a true dark condition, where thermal radiation from room temperature is shielded and the thermal excitations in the chips are frozen. A second tunneling breakdown was observed at this condition, which substantially limits the operating voltage range for the temperatures 20-30 K. Below $\sim$5 K, both SiPMs recover to an operating over-voltage range of 3-5 V. We found the chips function through the entire tested temperature range, and are capable of withstanding thermal cycling with no major performance degradation.
format Preprint
id arxiv_https___arxiv_org_abs_2501_03812
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Performance of Silicon photomultipliers at low temperatures
Hanski, Otto
Kiilerich, Tom
Ahopelto, Sampsa
Semakin, Aleksei
Ahokas, Janne
Dvornichenko, Viacheslav
Vasiliev, Sergey
Instrumentation and Detectors
Atomic Physics
We present experimental results of characterization of Silicon photomultipliers (SiPM) in a temperature range from 90~mK to 40~K. Two SiPMs, one from ONSEMI and one from Hamamatsu Photonics were tested. Operating voltage ranges, dark count rates, afterpulsing effects and photon detection efficiencies (PDE) were determined with illumination by 275 and 470~nm light fed into the cryostat via an optical fiber. A cryogenic shutter provided a true dark condition, where thermal radiation from room temperature is shielded and the thermal excitations in the chips are frozen. A second tunneling breakdown was observed at this condition, which substantially limits the operating voltage range for the temperatures 20-30 K. Below $\sim$5 K, both SiPMs recover to an operating over-voltage range of 3-5 V. We found the chips function through the entire tested temperature range, and are capable of withstanding thermal cycling with no major performance degradation.
title Performance of Silicon photomultipliers at low temperatures
topic Instrumentation and Detectors
Atomic Physics
url https://arxiv.org/abs/2501.03812