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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2501.03997 |
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| _version_ | 1866910909450944512 |
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| author | Wu, Qile Sojka, Antonín Price, Brad D. Agladze, Nikolay I. Yadav, Anup Pain, Sophie L. Murphy, John D. Niewelt, Tim Sherwin, Mark S. |
| author_facet | Wu, Qile Sojka, Antonín Price, Brad D. Agladze, Nikolay I. Yadav, Anup Pain, Sophie L. Murphy, John D. Niewelt, Tim Sherwin, Mark S. |
| contents | We introduce a two-fluid mobility model incorporating fundamental aspects of electron-hole (e-h) scattering such as momentum conservation for simulating laser-driven semiconductor switches (LDSSs). Compared to previous works that use Matthiessen's rule, the two-fluid mobility model predicts distinct AC responses of e-h plasmas in semiconductors. Based on the two-fluid mobility model, we develop a theory with very few adjustable parameters for simulating the switching performance of LDSSs based on high-purity indirect-gap semiconductors such as silicon (Si). As a prototypical application, we successfully reproduce experimentally measured reflectance at around 320 GHz in a laser-driven Si switch. By injecting e-h plasmas with densities up to $10^{20}\,\rm cm^{-3}$, we reveal the importance of carrier-screening effects in e-h scattering and Auger recombination for carrier densities above the critical carrier density for exciton-plasma Mott transition. Our results also suggest a way to characterize the intrinsic momentum-relaxation mechanism, e-h scattering, and the intrinsic e-h recombination mechanism in indirect-gap semiconductors, Auger recombination. We reassess the ambipolar Auger coefficient of high-purity Si with high injection levels of e-h plasmas up to $10^{20}\,\rm cm^{-3}$ and find a minimal value of $1.8\times10^{-41}\,{\rm cm^6/ns}$. The value is more than one order of magnitude smaller than the ambipolar Auger coefficient widely used for simulating LDSSs, $3.8\times10^{-40}\,{\rm cm^6/ns}$, which was deduced from minority-carrier lifetime in highly doped silicon more than four decades ago. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_03997 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Two-fluid mobility model from coupled hydrodynamic equations for simulating laser-driven semiconductor switches Wu, Qile Sojka, Antonín Price, Brad D. Agladze, Nikolay I. Yadav, Anup Pain, Sophie L. Murphy, John D. Niewelt, Tim Sherwin, Mark S. Materials Science We introduce a two-fluid mobility model incorporating fundamental aspects of electron-hole (e-h) scattering such as momentum conservation for simulating laser-driven semiconductor switches (LDSSs). Compared to previous works that use Matthiessen's rule, the two-fluid mobility model predicts distinct AC responses of e-h plasmas in semiconductors. Based on the two-fluid mobility model, we develop a theory with very few adjustable parameters for simulating the switching performance of LDSSs based on high-purity indirect-gap semiconductors such as silicon (Si). As a prototypical application, we successfully reproduce experimentally measured reflectance at around 320 GHz in a laser-driven Si switch. By injecting e-h plasmas with densities up to $10^{20}\,\rm cm^{-3}$, we reveal the importance of carrier-screening effects in e-h scattering and Auger recombination for carrier densities above the critical carrier density for exciton-plasma Mott transition. Our results also suggest a way to characterize the intrinsic momentum-relaxation mechanism, e-h scattering, and the intrinsic e-h recombination mechanism in indirect-gap semiconductors, Auger recombination. We reassess the ambipolar Auger coefficient of high-purity Si with high injection levels of e-h plasmas up to $10^{20}\,\rm cm^{-3}$ and find a minimal value of $1.8\times10^{-41}\,{\rm cm^6/ns}$. The value is more than one order of magnitude smaller than the ambipolar Auger coefficient widely used for simulating LDSSs, $3.8\times10^{-40}\,{\rm cm^6/ns}$, which was deduced from minority-carrier lifetime in highly doped silicon more than four decades ago. |
| title | Two-fluid mobility model from coupled hydrodynamic equations for simulating laser-driven semiconductor switches |
| topic | Materials Science |
| url | https://arxiv.org/abs/2501.03997 |