Novel magnetic-field-free switching behavior in vdW-magnet/oxide heterostructure
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866929750263463936 |
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| author | Keum, Jihoon Zhang, Kai-Xuan Cheon, Suik Kim, Hyuncheol Cui, Jingyuan Park, Giung Chang, Yunyeong Kim, Miyoung Lee, Hyun-Woo Park, Je-Geun |
| author_facet | Keum, Jihoon Zhang, Kai-Xuan Cheon, Suik Kim, Hyuncheol Cui, Jingyuan Park, Giung Chang, Yunyeong Kim, Miyoung Lee, Hyun-Woo Park, Je-Geun |
| contents | Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional ferromagnet/heavy-metal systems, where the current-induced spin polarization aligns in-plane orthogonal to the in-plane charge current and out-of-plane spin current. Here, we demonstrate a new approach for magnetic-field-free switching by fabricating a van-der-Waals magnet and oxide Fe3GeTe2/SrTiO3 heterostructure. This new magnetic-field-free switching is possible because the current-driven accumulated spins at the Rashba interface precess around an emergent interface magnetism, eventually producing an ultimate out-of-plane spin polarization. This interpretation is further confirmed by the switching polarity change controlled by the in-plane initialization magnetic fields with clear hysteresis. We successfully combined van-der-Waals magnet and oxide for the first time, especially taking advantage of spin-orbit torque on the SrTiO3 oxide. This allows us to establish a new way of magnetic field-free switching. Our work demonstrates an unusual perpendicular switching application of large spin Hall angle materials and precession of accumulated spins, and in doing so, opens up a new field and opportunities for van-der-Waals magnets and oxide spintronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_04235 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Novel magnetic-field-free switching behavior in vdW-magnet/oxide heterostructure Keum, Jihoon Zhang, Kai-Xuan Cheon, Suik Kim, Hyuncheol Cui, Jingyuan Park, Giung Chang, Yunyeong Kim, Miyoung Lee, Hyun-Woo Park, Je-Geun Materials Science Other Condensed Matter Applied Physics Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional ferromagnet/heavy-metal systems, where the current-induced spin polarization aligns in-plane orthogonal to the in-plane charge current and out-of-plane spin current. Here, we demonstrate a new approach for magnetic-field-free switching by fabricating a van-der-Waals magnet and oxide Fe3GeTe2/SrTiO3 heterostructure. This new magnetic-field-free switching is possible because the current-driven accumulated spins at the Rashba interface precess around an emergent interface magnetism, eventually producing an ultimate out-of-plane spin polarization. This interpretation is further confirmed by the switching polarity change controlled by the in-plane initialization magnetic fields with clear hysteresis. We successfully combined van-der-Waals magnet and oxide for the first time, especially taking advantage of spin-orbit torque on the SrTiO3 oxide. This allows us to establish a new way of magnetic field-free switching. Our work demonstrates an unusual perpendicular switching application of large spin Hall angle materials and precession of accumulated spins, and in doing so, opens up a new field and opportunities for van-der-Waals magnets and oxide spintronics. |
| title | Novel magnetic-field-free switching behavior in vdW-magnet/oxide heterostructure |
| topic | Materials Science Other Condensed Matter Applied Physics |
| url | https://arxiv.org/abs/2501.04235 |