Charge sensing of few-electron ZnO double quantum dots probed by radio-frequency reflectometry

Fuente: arXiv
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Main Authors: Noro, Kosuke, Shinozaki, Motoya, Kozuka, Yusuke, Matsumura, Kazuma, Fujiwara, Yoshihiro, Kumasaka, Takeshi, Tsukazaki, Atsushi, Kawasaki, Masashi, Otsuka, Tomohiro
Format: Preprint
Published: 2025
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author Noro, Kosuke
Shinozaki, Motoya
Kozuka, Yusuke
Matsumura, Kazuma
Fujiwara, Yoshihiro
Kumasaka, Takeshi
Tsukazaki, Atsushi
Kawasaki, Masashi
Otsuka, Tomohiro
author_facet Noro, Kosuke
Shinozaki, Motoya
Kozuka, Yusuke
Matsumura, Kazuma
Fujiwara, Yoshihiro
Kumasaka, Takeshi
Tsukazaki, Atsushi
Kawasaki, Masashi
Otsuka, Tomohiro
contents Zinc oxide (ZnO) has garnered much attention as a promising material for quantum devices due to its unique characteristics. To utilize the potential of ZnO for quantum devices, the development of fundamental technological elements such as high-speed readout and charge sensing capabilities has become essential. In this study, we address these challenges by demonstrating radio-frequency (rf) reflectometry and charge sensing in ZnO quantum dots, thus advancing the potential for qubit applications. A device is fabricated on a high-quality ZnO heterostructure, featuring gate-defined target and sensor quantum dots. The sensor dot, integrated into an rf resonator circuit, enables the detection of single-electron charges in the target dots. Using this setup, the formation of few-electron double quantum dots is observed by obtaining their charge stability diagram. Also, a charge stability diagram with a gate pulse sequence is measured. We discuss the strong electron correlation in ZnO, which leads to nearly degenerate spin-singlet and -triplet two-electron states in the (0, 2) charge state, and the perspectives on spin-state readout.
format Preprint
id arxiv_https___arxiv_org_abs_2501_04949
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Charge sensing of few-electron ZnO double quantum dots probed by radio-frequency reflectometry
Noro, Kosuke
Shinozaki, Motoya
Kozuka, Yusuke
Matsumura, Kazuma
Fujiwara, Yoshihiro
Kumasaka, Takeshi
Tsukazaki, Atsushi
Kawasaki, Masashi
Otsuka, Tomohiro
Mesoscale and Nanoscale Physics
Zinc oxide (ZnO) has garnered much attention as a promising material for quantum devices due to its unique characteristics. To utilize the potential of ZnO for quantum devices, the development of fundamental technological elements such as high-speed readout and charge sensing capabilities has become essential. In this study, we address these challenges by demonstrating radio-frequency (rf) reflectometry and charge sensing in ZnO quantum dots, thus advancing the potential for qubit applications. A device is fabricated on a high-quality ZnO heterostructure, featuring gate-defined target and sensor quantum dots. The sensor dot, integrated into an rf resonator circuit, enables the detection of single-electron charges in the target dots. Using this setup, the formation of few-electron double quantum dots is observed by obtaining their charge stability diagram. Also, a charge stability diagram with a gate pulse sequence is measured. We discuss the strong electron correlation in ZnO, which leads to nearly degenerate spin-singlet and -triplet two-electron states in the (0, 2) charge state, and the perspectives on spin-state readout.
title Charge sensing of few-electron ZnO double quantum dots probed by radio-frequency reflectometry
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2501.04949