Local Detection of Enhanced Hot Electron Scattering in InSb/CdTe Heterostructure Interface
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arXiv
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866909452645433344 |
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| author | Ma, Xiaoxiao Zhi, Zhenghang Deng, Weijie Li, Tianxin Weng, Qianchun Kou, Xufeng Lu, Wei |
| author_facet | Ma, Xiaoxiao Zhi, Zhenghang Deng, Weijie Li, Tianxin Weng, Qianchun Kou, Xufeng Lu, Wei |
| contents | The InSb/CdTe heterojunction structure, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin-orbit coupling effect and nonreciprocal transport, which makes its suitable for spintronic devices with broad applications in logic and storage fields. However, the complex heterojunction interfaces of InSb/CdTe, composed of group III-V and group II-VI semiconductors, are prone to interdiffusion. Therefore, characterization and study of the interfacial properties of InSb/CdTe heterojunctions are crucial for the growth improvement of the InSb/CdTe material system as well as its application in the field of spintronics. In this study, a novel scanning probe microscope, called a scanning noise microscope, was applied to visualize hot electron scattering in InSb/CdTe nano-devices. The results demonstrated that the near-field signal originates from the Coulomb scattering of charged ions on electrons at the interface of the embedded layer heterojunction. This real-space, nondestructive characterization of the heterojunction interface properties offers a new tool for enhancing the performance of heterojunctions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_05208 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Local Detection of Enhanced Hot Electron Scattering in InSb/CdTe Heterostructure Interface Ma, Xiaoxiao Zhi, Zhenghang Deng, Weijie Li, Tianxin Weng, Qianchun Kou, Xufeng Lu, Wei Applied Physics The InSb/CdTe heterojunction structure, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin-orbit coupling effect and nonreciprocal transport, which makes its suitable for spintronic devices with broad applications in logic and storage fields. However, the complex heterojunction interfaces of InSb/CdTe, composed of group III-V and group II-VI semiconductors, are prone to interdiffusion. Therefore, characterization and study of the interfacial properties of InSb/CdTe heterojunctions are crucial for the growth improvement of the InSb/CdTe material system as well as its application in the field of spintronics. In this study, a novel scanning probe microscope, called a scanning noise microscope, was applied to visualize hot electron scattering in InSb/CdTe nano-devices. The results demonstrated that the near-field signal originates from the Coulomb scattering of charged ions on electrons at the interface of the embedded layer heterojunction. This real-space, nondestructive characterization of the heterojunction interface properties offers a new tool for enhancing the performance of heterojunctions. |
| title | Local Detection of Enhanced Hot Electron Scattering in InSb/CdTe Heterostructure Interface |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2501.05208 |