Wafer-scale correlated morphology and optoelectronic properties in GaAs/AlGaAs core-shell nanowires
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866929675920474112 |
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| author | Das, Ishika Minehisa, Keisuke Ishikawa, Fumitaro Parkinson, Patrick Church, Stephen |
| author_facet | Das, Ishika Minehisa, Keisuke Ishikawa, Fumitaro Parkinson, Patrick Church, Stephen |
| contents | Achieving uniform nanowire size, density, and alignment across a wafer is challenging, as small variations in growth parameters can impact performance in energy harvesting devices like solar cells and photodetectors. This study demonstrates the in-depth characterization of uniformly grown GaAs/AlGaAs core-shell nanowires on a two-inch Si(111) substrate using Ga-induced self-catalyzed molecular beam epitaxy. By integrating Scanning Electron Microscopy and Time Correlated Single-Photon Counting, we establish a detailed model of structural and optoelectronic properties across wafer and micron scales. While emission intensity varies by up to 35%, carrier lifetime shows only 9% variation, indicating stable material quality despite structural inhomogeneities. These findings indicate that, for the two-inch GaAs/AlGaAs nanowire wafer, achieving uniform nanowire coverage had a greater impact on consistent optoelectronic properties than variations in material quality, highlighting its significance for scalable III-V semiconductor integration on silicon in advanced optoelectronic devices such as solar cells and photodetectors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_05275 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Wafer-scale correlated morphology and optoelectronic properties in GaAs/AlGaAs core-shell nanowires Das, Ishika Minehisa, Keisuke Ishikawa, Fumitaro Parkinson, Patrick Church, Stephen Optics Achieving uniform nanowire size, density, and alignment across a wafer is challenging, as small variations in growth parameters can impact performance in energy harvesting devices like solar cells and photodetectors. This study demonstrates the in-depth characterization of uniformly grown GaAs/AlGaAs core-shell nanowires on a two-inch Si(111) substrate using Ga-induced self-catalyzed molecular beam epitaxy. By integrating Scanning Electron Microscopy and Time Correlated Single-Photon Counting, we establish a detailed model of structural and optoelectronic properties across wafer and micron scales. While emission intensity varies by up to 35%, carrier lifetime shows only 9% variation, indicating stable material quality despite structural inhomogeneities. These findings indicate that, for the two-inch GaAs/AlGaAs nanowire wafer, achieving uniform nanowire coverage had a greater impact on consistent optoelectronic properties than variations in material quality, highlighting its significance for scalable III-V semiconductor integration on silicon in advanced optoelectronic devices such as solar cells and photodetectors. |
| title | Wafer-scale correlated morphology and optoelectronic properties in GaAs/AlGaAs core-shell nanowires |
| topic | Optics |
| url | https://arxiv.org/abs/2501.05275 |