Off-resonant photoluminescence spectroscopy of high-optical quality single photon emitters in GaN
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arXiv
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866913667503620096 |
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| author | Dalla, Nilesh Kulboka, Paweł Kobecki, Michał Misiak, Jan Prystawko, Paweł Turski, Henryk Kossacki, Piotr Jakubczyk, Tomasz |
| author_facet | Dalla, Nilesh Kulboka, Paweł Kobecki, Michał Misiak, Jan Prystawko, Paweł Turski, Henryk Kossacki, Piotr Jakubczyk, Tomasz |
| contents | In this work, we analyze the relevance of excitation parameters on the emission from single-photon emitting defect centers in GaN. We investigate the absorption spectrum of different emitters by photoluminescence excitation technique at 10\,K. We report large spectral jumps (shifts up to 22\,meV) in the emitters' zero-phonon line (ZPL). The likelihood of such jumps is increased by the change in excitation energy. The shifts indicate a large built-in dipole moment of the defects and suggest a possibility to electrically tune their ZPL in a wide range. From the photoluminescence excitation studies, we observe that for majority of the emitters the absorption peaks exist between 2 and 2.55\,eV. The absorption peaks vary from emitter to emitter, and no universal absorption pattern is apparent. Finally, for selected emitters we observe significantly reduced spectral diffusion and instrument-limited linewidth of $138\,μeV$ (0.04\,nm).These findings show a new perspective for atomic defect GaN emitters as sources of coherent photons, shine new light on their energy level structure and show the possibility of tuning the ZPL, paving the way to fully harness their potential for applications in quantum technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_05546 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Off-resonant photoluminescence spectroscopy of high-optical quality single photon emitters in GaN Dalla, Nilesh Kulboka, Paweł Kobecki, Michał Misiak, Jan Prystawko, Paweł Turski, Henryk Kossacki, Piotr Jakubczyk, Tomasz Materials Science Mesoscale and Nanoscale Physics In this work, we analyze the relevance of excitation parameters on the emission from single-photon emitting defect centers in GaN. We investigate the absorption spectrum of different emitters by photoluminescence excitation technique at 10\,K. We report large spectral jumps (shifts up to 22\,meV) in the emitters' zero-phonon line (ZPL). The likelihood of such jumps is increased by the change in excitation energy. The shifts indicate a large built-in dipole moment of the defects and suggest a possibility to electrically tune their ZPL in a wide range. From the photoluminescence excitation studies, we observe that for majority of the emitters the absorption peaks exist between 2 and 2.55\,eV. The absorption peaks vary from emitter to emitter, and no universal absorption pattern is apparent. Finally, for selected emitters we observe significantly reduced spectral diffusion and instrument-limited linewidth of $138\,μeV$ (0.04\,nm).These findings show a new perspective for atomic defect GaN emitters as sources of coherent photons, shine new light on their energy level structure and show the possibility of tuning the ZPL, paving the way to fully harness their potential for applications in quantum technologies. |
| title | Off-resonant photoluminescence spectroscopy of high-optical quality single photon emitters in GaN |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2501.05546 |