The coupling of polarization and oxygen vacancy migration in ferroelectric Hf0.5Zr0.5O2 thin films enables electrically controlled thermal memories above room temperature

Fuente: arXiv

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Bibliographic Details
Main Authors:	Barneo, Didac, Ramos, Rafael, Romero, Hugo, Leboran, Victor, Varela-Dominguez, Noa, Pardo, Jose A., Rivadulla, Francisco, Langenberg, Eric
Format:	Preprint
Published:	2025
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2501.06005