Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design
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arXiv
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| Autori principali: | , , , , , , , , , , , , |
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| Natura: | Preprint |
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2025
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| _version_ | 1866913644618448896 |
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| author | Zhou, Chao Feng, Yanpeng Ma, Liyang Huang, Haoliang Si, Yangyang Wang, Hailin Huang, Sizhe Li, Jingxuan Kuo, Chang-Yang Das, Sujit Tang, Yunlong Liu, Shi Chen, Zuhuang |
| author_facet | Zhou, Chao Feng, Yanpeng Ma, Liyang Huang, Haoliang Si, Yangyang Wang, Hailin Huang, Sizhe Li, Jingxuan Kuo, Chang-Yang Das, Sujit Tang, Yunlong Liu, Shi Chen, Zuhuang |
| contents | Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has been greatly hindered by reliability issues, with fatigue being a major impediment. We report the fatigue-free behavior in interface-designed Hf0.5Zr0.5O2-based heterostructures. A coherent CeO2-x/Hf0.5Zr0.5O2 heterointerface is constructed, wherein CeO2-x acts as an oxygen sponge, capable of reversibly accepting and releasing oxygen vacancies. This design effectively alleviates defect aggregation at the electrode-ferroelectric interface, enabling improved switching characteristics. Further, a symmetric capacitor architecture is designed to minimize the imprint, thereby suppressing the cycling-induced oriented defect drift. The two-pronged technique mitigates oxygen-voltammetry-generated chemical/energy fluctuations, suppressing the formation of paraelectric phase and polarization degradation. The design ensures a fatigue-free feature exceeding 10^11 switching cycles and an endurance lifetime surpassing 10^12 cycles for Hf0.5Zr0.5O2-based capacitors, along with excellent temperature stability and retention. These findings pave the way for developing ultra-stable hafnia-based ferroelectric devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_06754 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design Zhou, Chao Feng, Yanpeng Ma, Liyang Huang, Haoliang Si, Yangyang Wang, Hailin Huang, Sizhe Li, Jingxuan Kuo, Chang-Yang Das, Sujit Tang, Yunlong Liu, Shi Chen, Zuhuang Materials Science Applied Physics Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has been greatly hindered by reliability issues, with fatigue being a major impediment. We report the fatigue-free behavior in interface-designed Hf0.5Zr0.5O2-based heterostructures. A coherent CeO2-x/Hf0.5Zr0.5O2 heterointerface is constructed, wherein CeO2-x acts as an oxygen sponge, capable of reversibly accepting and releasing oxygen vacancies. This design effectively alleviates defect aggregation at the electrode-ferroelectric interface, enabling improved switching characteristics. Further, a symmetric capacitor architecture is designed to minimize the imprint, thereby suppressing the cycling-induced oriented defect drift. The two-pronged technique mitigates oxygen-voltammetry-generated chemical/energy fluctuations, suppressing the formation of paraelectric phase and polarization degradation. The design ensures a fatigue-free feature exceeding 10^11 switching cycles and an endurance lifetime surpassing 10^12 cycles for Hf0.5Zr0.5O2-based capacitors, along with excellent temperature stability and retention. These findings pave the way for developing ultra-stable hafnia-based ferroelectric devices. |
| title | Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2501.06754 |