Intraband motion impact to the polarization dynamics in 2D semiconductors

Fuente: arXiv
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Autori principali: Slobodeniuk, A. O., Novotný, T.
Natura: Preprint
Pubblicazione: 2025
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author Slobodeniuk, A. O.
Novotný, T.
author_facet Slobodeniuk, A. O.
Novotný, T.
contents We consider the generation of microscopic polarization in two-dimensional semiconductors under intense optical fields in the nonresonant regime. We demonstrate that the intraband motion of quasiparticles, driven by the electric field of the laser pulse, contributes substantially to the system's polarization. The effects of intraband motion are analyzed using the semiconductor Bloch equations. We propose a method for solving these equations by considering them in a reference frame moving along the trajectories of the quasiparticles in momentum space. We demonstrate the developed technique on transition metal dichalcogenide monolayers irradiated by strong circularly polarized infrared light. The solution is provided in the form of a power series expansion by a small parameter that naturally emerges in the system. The implications of the results are examined, and the limitations of the approach are discussed.
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id arxiv_https___arxiv_org_abs_2501_06885
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Intraband motion impact to the polarization dynamics in 2D semiconductors
Slobodeniuk, A. O.
Novotný, T.
Mesoscale and Nanoscale Physics
We consider the generation of microscopic polarization in two-dimensional semiconductors under intense optical fields in the nonresonant regime. We demonstrate that the intraband motion of quasiparticles, driven by the electric field of the laser pulse, contributes substantially to the system's polarization. The effects of intraband motion are analyzed using the semiconductor Bloch equations. We propose a method for solving these equations by considering them in a reference frame moving along the trajectories of the quasiparticles in momentum space. We demonstrate the developed technique on transition metal dichalcogenide monolayers irradiated by strong circularly polarized infrared light. The solution is provided in the form of a power series expansion by a small parameter that naturally emerges in the system. The implications of the results are examined, and the limitations of the approach are discussed.
title Intraband motion impact to the polarization dynamics in 2D semiconductors
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2501.06885